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SK150MLIB12F4TE2 PDF预览

SK150MLIB12F4TE2

更新时间: 2024-11-25 21:20:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
6页 363K
描述
Insulated Gate Bipolar Transistor,

SK150MLIB12F4TE2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Base Number Matches:1

SK150MLIB12F4TE2 数据手册

 浏览型号SK150MLIB12F4TE2的Datasheet PDF文件第2页浏览型号SK150MLIB12F4TE2的Datasheet PDF文件第3页浏览型号SK150MLIB12F4TE2的Datasheet PDF文件第4页浏览型号SK150MLIB12F4TE2的Datasheet PDF文件第5页浏览型号SK150MLIB12F4TE2的Datasheet PDF文件第6页 
SK150MLIB12F4TE2  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT1  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
149  
119  
150  
450  
V
A
A
A
A
V
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3 x ICnom  
-20 ... 20  
SEMITOP®E2  
VCC = 800 V, VGE 15 V, Tj = 150 °C,  
CES 1200 V  
tpsc  
10  
µs  
°C  
V
Tj  
-40 ... 175  
IGBT module  
IGBT2  
VCES  
IC  
Tj = 25 °C  
1200  
170  
137  
150  
450  
V
A
A
A
A
V
Engineering Sample  
SK150MLIB12F4TE2  
Target Data  
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3 x ICnom  
Features  
-20 ... 20  
• One screw mounting module  
• Solder free mounting with Press-Fit  
terminals  
VCC = 800 V, VGE 15 V, Tj = 150 °C,  
CES 1200 V  
tpsc  
Tj  
10  
µs  
°C  
V
• Fully compatible with other SEMITOP®  
Press-Fit types  
-40 ... 175  
Diode1  
VRRM  
IF  
• Improved thermal performances by  
aluminium oxide substrate  
• 1200V Trench4 Fast technology in  
upper position  
Tj = 25 °C  
1200  
80  
63  
100  
300  
V
A
A
A
A
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
• 1200V Trench4 technology in bottom  
position  
• Symmetrical current sharing  
• Low inductive module design  
• Integrated NTC temperature sensor  
• UL recognized, file no. E 63 532  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3 x IFnom  
10 ms, sin 180°, Tj = 25 °C  
550  
-40 ... 175  
A
°C  
Diode2  
VRRM  
IF  
Tj = 25 °C  
1200  
80  
63  
100  
300  
V
A
A
A
A
Typical Applications  
• UPS  
• Solar  
• Suitable for NPC 3-level configuration  
featuring 1500VDC bus  
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3 x IFnom  
10 ms, sin 180°, Tj = 25 °C  
Remarks*  
550  
-40 ... 175  
A
°C  
• IGBT1: outer IGBT of NPC  
configuration assembly  
Diode5  
VRRM  
IF  
• IGBT2: inner IGBT of NPC  
configuration assembly  
Tj = 25 °C  
1200  
137  
108  
150  
450  
V
A
A
A
A
Ts = 25 °C  
Ts = 70 °C  
• Diode1: antiparallel diode of IGBT1  
• Diode2: antiparallel diode of IGBT2  
• Diode5: clamping diode of NPC  
configuration assembly  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3 x IFnom  
10 ms, sin 180°, Tj = 25 °C  
774  
-40 ... 175  
A
°C  
Module  
It(RMS)  
Tstg  
Tterminal = 100 °C, TS = 60°C  
AC, sinusoidal, t = 1 min  
t.b.d.  
-40 ... 125  
2500  
A
°C  
V
Visol  
MLIB-T  
© by SEMIKRON  
Rev. 0.1 – 14.12.2016  
1

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