Datasheet > SIS444DN

SIS444DN

更新时间： 2024-10-14 09:25:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	133K
描述
N-Channel 30 V (D-S) MOSFET

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SIS444DN 数据手册

New Product

SiS444DN

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

PRODUCT SUMMARY

Definition

I_D(A)^f

35^g

V_DS(V)

R_DS(on)() Max.

0.0033 at V_GS= 10 V

0.0043 at V_GS= 4.5 V

Q_g(Typ.)

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

33.5 nC

APPLICATIONS

PowerPAK^®1212-8

•

Motor Control

Industrial

Load Switch

ORing

3.30 mm

Bottom View

N-Channel MOSFET

Ordering Information:

SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

35^g

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

35^g

I_D

Continuous Drain Current (T_J= 150 °C)

24.9^{a, b}

20^{a, b}

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

35^g

3.3^{a, b}

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

3.7^{a, b}

3.1^{a, b}

- 55 to 150

260

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, e}

Maximum Junction-to-Case (Drain)

t  10 s

Steady State

°C/W

1.9

2.4

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on T_C= 25 °C.

g. Package limited.

Document Number: 63276

S11-1379-Rev. A, 11-Jul-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SIS444DN相关器件

型号	品牌	获取价格	描述	数据表
SIS444DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiS447DN	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIS448DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS448DN-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Cut TR (SOS)
SIS452DN	VISHAY	获取价格	N-Channel 12-V (D-S) MOSFET
SIS452DN-T1-GE3	VISHAY	获取价格	N-CHANNEL 12-V (D-S) MOSFET - Tape and Reel
SIS454DN	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SIS454DN-T1-GE3	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SIS456DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS456DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET

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