Datasheet > SIR-341ST3F_10

SIR-341ST3F_10

更新时间： 2024-11-20 09:25:03

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
3页	135K
描述
Infrared light emitting diode, top view type

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SIR-341ST3F_10 数据手册

Infrared light emitting diode, top view type

SIR-341ST3F

The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and

a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

ideal for compact optical control equipment.

Applications

Dimensions (Unit : mm)

Optical control equipment

Light source for remote control devices

φ3.8 0.3

φ3.5

Notes:

φ3.1 0.2

1. Unspecified tolerance

shall be 0.2.

2. Dimension in parenthesis are

show for reference.

Features

4−0.6

1) Compact (3.1mm).

2) High efficiency, high output P^O8.4mW (IF50mA).

3) Wide radiation angle  1/216deg.

4) Peak wavelength well suited to silicon detectors (^P940nm).

5) Good current-optical output linearity.

6) Long life, high reliability.

2− 0.5

(2.5)

1 Anode

2 Cathode

Absolute maximum ratings (Ta = 25C)

Parameter

Forward current

Symbol

Limits

Unit

Reverse voltage

Power dissipation

100

°C

∗

Pulse forward current

Operating temperature

500

Topr

Tstg

−25 to +85

−40 to +85

Storage temperature

°C

∗ Pulse width=0.1msec, duty ratio 1%

Electrical and optical characteristics (Ta = 25C)

Symbol

Min.

−

Typ.

8.4

18.1

1.3

−

Max.

Unit

Conditions

Parameter

Optical output

−

mW/sr

=50mA

Emitting strength

5.6

−

Forward voltage

1.5

−

Reverse current

−

μA

VR=3V

Peak light emitting wavelength

Spectral line half width

Half-viewing angle

Response time

λP

−

940

=50mA

Δλ

−

1 / 2

−

deg

μs

tr·tf

−

1.0

−

MHz

Cut-off frequency

www.rohm.com

2010.06 - Rev.B

1/2

12 3

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