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SIGC07T60SNC PDF预览

SIGC07T60SNC

更新时间: 2024-11-21 06:11:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管
页数 文件大小 规格书
4页 79K
描述
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

SIGC07T60SNC 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIE
包装说明:UNCASED CHIP, S-XUUC-N2针数:2
Reach Compliance Code:compliant风险等级:5.67
Is Samacsys:N最大集电极电流 (IC):6 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):84 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:S-XUUC-N2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
最大上升时间(tr):20 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):318 ns标称接通时间 (ton):41 ns
Base Number Matches:1

SIGC07T60SNC 数据手册

 浏览型号SIGC07T60SNC的Datasheet PDF文件第2页浏览型号SIGC07T60SNC的Datasheet PDF文件第3页浏览型号SIGC07T60SNC的Datasheet PDF文件第4页 
SIGC07T60SNC  
IGBT Chip in NPT-technology  
C
FEATURES:  
·
·
·
·
·
600V NPT technology  
100µm chip  
short circuit prove  
positive temperature coefficient  
easy paralleling  
This chip is used for:  
·
DuoPack SKP06N60  
G
Applications:  
E
·
drives  
Chip Type  
VCE  
ICn  
6A  
6A  
Die Size  
2.6 x 2.6 mm2  
2.6 x 2.6 mm2  
Package  
sawn on foil  
unsawn  
Ordering Code  
Q67041-A4672-  
A003  
Q67041-A4672-  
A002  
SIGC07T60SNC  
SIGC07T60SNC  
600V  
600V  
MECHANICAL PARAMETER:  
mm2  
Raster size  
2.6 x 2.6  
6.76 / 4.3  
1.107 x 1.78  
0.5 x 0.7  
100  
Area total / active  
Emitter pad size  
Gate pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
0 //180  
Max.possible chips per wafer  
Passivation frontside  
Emitter metallization  
2249  
Photoimide  
3200 nm Al Si 1%  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Collector metallization  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 7212-S, Edition 2, 28.11.2003  

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