Datasheet > SIGC109T120R3LE

SIGC109T120R3LE

更新时间： 2024-11-21 20:53:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	124K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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技术参数
数据手册

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SIGC109T120R3LE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIGC109T120R3LE 数据手册

SIGC109T120R3LE

IGBT3 Chip

Features:

This chip is used for:

power modules

•

1200V Trench & Field Stop technology

•

low turn-off losses

short tail current

Applications:

positive temperature coefficient

easy paralleling

•

drives

Chip Type

V_CE

I_C

Die Size

Package

SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm²

sawn on foil

Mechanical Parameters

Raster size

10.47 x 10.44

Emitter pad size (incl. gate pad)

Gate pad size

8 x (4.391 x 2.114)

mm²

1.139 x 1.139

109.3

120

Area total

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

222

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

Recommended storage environment

environment, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, IMM PSD, L7686U, Edition 2.0, 30.04.2010

12 3 4 5

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