是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | End Of Life | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, S-XUUC-N2 | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.19 |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 76 ns |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | S-XUUC-N2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
最大上升时间(tr): | 25 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 329 ns | 标称接通时间 (ton): | 50 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SIGC12T60SNCX1SA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE | |
SIGC12T60SNCX1SA3 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE | |
SIGC144T170C | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
SIGC144T170R2C | INFINEON |
获取价格 |
IGBT Chip in NPT-technology | |
SIGC144T170R2C_09 | INFINEON |
获取价格 |
IGBT Chip in NPT-technology 1700V NPT technol | |
SIGC14T60N | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, DIE-2 | |
SIGC14T60NC | INFINEON |
获取价格 |
IGBT Chip in NPT-technology | |
SIGC14T60SN | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, DIE-2 | |
SIGC14T60SNC | INFINEON |
获取价格 |
IGBT Chip in NPT-technology 600V NPT technolo | |
SIGC14T60SNCX1SA4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 3.80 X 3.80 MM, DIE |