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SIGC12T60SNC PDF预览

SIGC12T60SNC

更新时间: 2024-11-21 09:25:35
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
4页 79K
描述
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

SIGC12T60SNC 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:DIE
包装说明:UNCASED CHIP, S-XUUC-N2针数:2
Reach Compliance Code:compliant风险等级:5.19
最大集电极电流 (IC):10 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):76 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:S-XUUC-N2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
最大上升时间(tr):25 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):329 ns标称接通时间 (ton):50 ns
Base Number Matches:1

SIGC12T60SNC 数据手册

 浏览型号SIGC12T60SNC的Datasheet PDF文件第2页浏览型号SIGC12T60SNC的Datasheet PDF文件第3页浏览型号SIGC12T60SNC的Datasheet PDF文件第4页 
SIGC12T60SNC  
IGBT Chip in NPT-technology  
C
FEATURES:  
This chip is used for:  
SGP10N60  
·
·
·
·
·
600V NPT technology  
100µm chip  
short circuit prove  
positive temperature coefficient  
easy paralleling  
·
Applications:  
drives  
G
E
·
Chip Type  
VCE  
ICn  
10A  
10A  
Die Size  
3.5 x 3.5 mm2  
3.5 x 3.5 mm2  
Package  
Ordering Code  
Q67041-A4664-  
A001  
Q67041-A4664-  
A002  
SIGC12T60SNC  
600V  
sawn on foil  
SIGC12T60SNC  
600V  
unsawn  
MECHANICAL PARAMETER:  
mm2  
Raster size  
3.5 x 3.5  
12.25 / 8.7  
1.99 x 1.58  
1.1 x 0.694  
100  
Area total / active  
Emitter pad size  
Gate pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
270  
Max.possible chips per wafer  
Passivation frontside  
Emitter metallization  
1219  
Photoimide  
3200 nm Al Si 1%  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Collector metallization  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003  

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