Datasheet > SIGC100T60R3_10

SIGC100T60R3_10

更新时间： 2024-11-21 09:25:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
5页	123K
描述
600V Trench & Field Stop technology positive temperature coefficient

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SIGC100T60R3_10 数据手册

SIGC100T60R3

IGBT³Chip

Features:

This chip is used for:

power module

•

600V Trench & Field Stop technology

•

low V_CE(sat)

low turn-off losses

short tail current

Applications:

•

drives

positive temperature coefficient

easy paralleling

Chip Type

SIGC100T60R3

V_CE

I_C

Die Size

Package

sawn on foil

600V 200A 9.73 x 10.23 mm²

Mechanical Parameter

Raster size

9.73 x 10.23

( 4.256 x 1.938 ) x 4

( 4.256 x 2.356 ) x 4

Emitter pad size (incl. gate pad)

Gate pad size

mm²

1.615 x 0.817

Area total

99.5

Thickness

µm

Wafer size

150

Max.possible chips per wafer

Passivation frontside

Pad metal

126

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

Recommended storage environment

environment, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010

12 3 4 5

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