SIGC08T60E

更新时间： 2024-11-21 13:13:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅
页数	文件大小	规格书
4页	76K
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数据手册

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SIGC08T60E 数据手册

SIGC08T60

IGBT³Chip

FEATURES:

This chip is used for:

600V Trench & Field Stop technology

low V_CE(sat)

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

power module

discrete components

Applications:

drives

white goods

resonant applications

Chip Type

SIGC08T60

V_CE

I_Cn

15A

Die Size

Package

sawn on foil

Ordering Code

Q67050-

A4282-A101

600V

2.86 x 2.82 mm²

MECHANICAL PARAMETER:

Raster size

2.86 x 2.82

Emitter pad size

Gate pad size

2.014 x 2.014

mm²

0.361 x 0.513

Area total / active

Thickness

8.0 / 5.2

mm²

µm

150

Wafer size

deg

Flat position

Max. possible chips per wafer

Passivation frontside

Emitter metallization

1836 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies AI PS DD CLS, L7531A, Edition 2, 27.01.2005

12 3 4

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