Datasheet > Si3493DDV

Si3493DDV

更新时间： 2024-10-01 14:51:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	310K
描述
P-Channel 20 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si3493DDV 数据手册

Si3493DDV

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen III p-channel power MOSFET

TSOP-6 Single

• R_DS(on)rating at V_GS= -1.8 V

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Battery management in mobile devices

• Battery switch

Top View

Marking code: BQ

• Load switch

PRODUCT SUMMARY

V_DS(V)

• PA switch

-20

0.0240

0.0321

0.0511

19.8

R_DS(on)max. () at V_GS= -4.5 V

R_DS(on)max. () at V_GS= -2.5 V

R_DS(on)max. () at V_GS= -1.8 V

Q_gtyp. (nC)

P-Channel MOSFET

I_D(A) ^{a, d}

-8

Configuration

Single

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and halogen-free

Si3493DDV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

-8 ^a

-8

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

-7.5 ^{b, c}

-6 ^{b, c}

-32

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

-3

Continuous source-drain diode current

-1.67 ^{b, c}

Single pulse avalanche current

Single pulse avalanche energy

I_AS

-10

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.6

2.3

Maximum power dissipation

P_D

2 ^{b, c}

1.3 ^{b, c}

-55 to +150

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

TYPICAL

MAXIMUM

62.5

UNIT

t  5 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 110 °C/W.

S16-2645-Rev. A, 26-Dec-16

Document Number: 74735

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与Si3493DDV相关器件

型号	品牌	获取价格	描述	数据表
SI3493DDV-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI3493DV	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI3493DV-T1	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI3493DV-T1-E3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI3495DV	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI3495DV_08	VISHAY	获取价格	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
SI3495DV-T1-E3	VISHAY	获取价格	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
SI3499DV	VISHAY	获取价格	P-Channel 1.5-V (G-S) MOSFET
SI3499DV_08	VISHAY	获取价格	P-Channel 1.5-V (G-S) MOSFET
SI3499DV-T1-E3	VISHAY	获取价格	P-Channel 1.5-V (G-S) MOSFET