Datasheet > SI3495DV_08

SI3495DV_08

更新时间： 2024-09-30 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	99K
描述
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

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SI3495DV_08 数据手册

New Product

Si3495DV

Vishay Siliconix

P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET: 1.5 V Rated

V_DS(V)

r_DS(on)(Ω)

I_D(A)

- 7

Ultra-Low On-Resistance

100 % R_gTested

0.024 at V_GS= - 4.5 V

0.030 at V_GS= - 2.5 V

0.038 at V_GS= - 1.8 V

0.048 at V_GS= - 1.5 V

RoHS

- 6.2

- 5.2

- 5.0

COMPLIANT

- 20

APPLICATIONS

•

Load Switch and PA Switch for Portable

Devices

TSOP-6

Top View

(4) S

3 mm

(3) G

2.85 mm

(1, 2, 5, 6) D

Ordering Information:

Marking Code:

Si3495DV-T1-E3 (Lead (Pb)-free)

95xxx

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 sec

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 85 °C

- 7

- 5.3

- 3.9

Continuous Drain Current (T_J= 150 °C)^a

I_D

- 3.6

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

- 20

- 1.7

2.0

- 0.9

1.1

T_A= 25 °C

T_A= 85 °C

Maximum Power Dissipation^a

P_D

1.0

0.6

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 5 sec

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

110

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 73135

S-71321-Rev. B, 02-Jul-07

www.vishay.com

12 3 4 5 6

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