Datasheet > SI1912EDH_08

SI1912EDH_08

更新时间： 2024-10-14 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	71K
描述
Dual N-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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SI1912EDH_08 数据手册

Si1912EDH

Vishay Siliconix

New Product

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 2000 V

V_DS(V)

r_DS(on)(W)

I_D(A)

D Thermally Enhanced SC-70 Package

APPLICATIONS

0.280 @ V = 4.5 V

1.28

1.13

1.0

0.360 @ V = 2.5

D Load Switching

D PA Switch

0.450 @ V = 1.8

D Level Switch

SOT-363

SC-70 (6-LEADS)

Marking Code

CA XX

1 kW

Lot Traceability

and Date Code

Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 85_C

1.13

0.81

1.28

0.92

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

0.61

0.74

0.38

0.48

0.57

0.30

= 25_C

= 85_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

170

220

100

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71408

S-03176—Rev. A, 05-Mar-01

www.vishay.com

12 3 4 5 6

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