5秒后页面跳转
SI1917EDH-E3 PDF预览

SI1917EDH-E3

更新时间: 2024-11-15 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 50K
描述
TRANSISTOR 1000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General Purpose Small Signal

SI1917EDH-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:12 V最大漏极电流 (ID):1 A
最大漏源导通电阻:0.37 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1917EDH-E3 数据手册

 浏览型号SI1917EDH-E3的Datasheet PDF文件第2页浏览型号SI1917EDH-E3的Datasheet PDF文件第3页浏览型号SI1917EDH-E3的Datasheet PDF文件第4页浏览型号SI1917EDH-E3的Datasheet PDF文件第5页浏览型号SI1917EDH-E3的Datasheet PDF文件第6页 
Si1917EDH  
Vishay Siliconix  
New Product  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS: 1.8-V Rated  
D ESD Protected: 3000 V  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Thermally Enhanced SC-70 Package  
APPLICATIONS  
0.370 @ V = –4.5 V  
–1.15  
–0.92  
–0.78  
GS  
–12  
0.575 @ V = –2.5  
GS  
V
V
D Load Switching  
D PA Switch  
0.800 @ V = –1.8  
GS  
D Level Switch  
D
D
SOT-363  
SC-70 (6-LEADS)  
3 kW  
3 kW  
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code  
DB XX  
G
G
5
4
G
2
Lot Traceability  
and Date Code  
Part # Code  
S
2
S
S
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–12  
DS  
V
"12  
GS  
T
= 25_C  
= 85_C  
–1.00  
–0.73  
–1.15  
–0.83  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
–3  
DM  
a
Continuous Diode Current (Diode Conduction)  
I
–0.61  
0.73  
0.38  
–0.47  
0.57  
0.30  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
130  
170  
80  
170  
220  
100  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71414  
S-03174—Rev. A, 07-Mar-01  
www.vishay.com  
1

与SI1917EDH-E3相关器件

型号 品牌 获取价格 描述 数据表
SI1917EDH-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-o
SI1917EDH-T1-GE3 VISHAY

获取价格

TRANSISTOR 1000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND
SI1922EDH VISHAY

获取价格

Dual N-Channel 20 V (D-S) MOSFET
SI1922EDH-T1-GE3 VISHAY

获取价格

MOSFET N-CH 20V DUAL SOT-363
SI1926DL VISHAY

获取价格

Dual N-Channel 60-V (D-S) MOSFET
SI1926DL_10 VISHAY

获取价格

Dual N-Channel 60 V (D-S) MOSFET
SI1926DL-T1-E3 VISHAY

获取价格

Dual N-Channel 60-V (D-S) MOSFET
SI1958DH VISHAY

获取价格

Dual N-Channel 20 V (D-S) MOSFET
SI1958DH_10 VISHAY

获取价格

Dual N-Channel 20 V (D-S) MOSFET
SI1958DH-T1-E3 VISHAY

获取价格

Dual N-Channel 20-V (D-S) MOSFET