Datasheet > SI1972DH

SI1972DH

更新时间： 2024-10-14 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	120K
描述
Dual N-Channel 30-V (D-S) MOSFET

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SI1972DH 数据手册

Si1972DH

Vishay Siliconix

New Product

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.190 at V_GS= 10 V

0.344 at V_GS= 4.5 V

1.3

APPLICATIONS

0.91 nC

RoHS

COMPLIANT

•

Load switch for portable applications

SOT-363

SC-70 (6-LEADS)

Marking Code

CE XX

Lot Traceability

and Date Code

Part # Code

Top View

N-Channel MOSFET

Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

1.3^a

1.2

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

_A= 25 °C

1.0

Continuous Source-Drain Diode Current

0.61^c

1.25

0.8

0.74^{b, c}

0.47^{b, c}

T_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Symbol

Typical

130

Maximum

170

Unit

R_thJA

t ≤ 5 sec

°C/W

R_thJF

Steady State

100

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 220 °C/W.

Document Number: 74398

S-62442-Rev. A, 27-Nov-06

www.vishay.com

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