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SI1988DH-T1-E3 PDF预览

SI1988DH-T1-E3

更新时间: 2024-11-15 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 121K
描述
Dual N-Channel 20-V (D-S) MOSFET

SI1988DH-T1-E3 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.3 A
最大漏极电流 (ID):1.3 A最大漏源导通电阻:0.168 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.25 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1988DH-T1-E3 数据手册

 浏览型号SI1988DH-T1-E3的Datasheet PDF文件第2页浏览型号SI1988DH-T1-E3的Datasheet PDF文件第3页浏览型号SI1988DH-T1-E3的Datasheet PDF文件第4页浏览型号SI1988DH-T1-E3的Datasheet PDF文件第5页浏览型号SI1988DH-T1-E3的Datasheet PDF文件第6页浏览型号SI1988DH-T1-E3的Datasheet PDF文件第7页 
Si1988DH  
Vishay Siliconix  
New Product  
Dual N-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
I
D (A)a  
VDS (V)  
rDS(on) (Ω)  
Qg (Typ)  
1.3a  
1.3a  
1.3a  
0.168 at VGS = 4.5 V  
0.200 at VGS = 2.5 V  
0.250 at VGS = 1.8 V  
APPLICATIONS  
RoHS  
20  
1.6 nC  
COMPLIANT  
Load Switch for Portable Applications  
SOT-363  
SC-70 (6-LEADS)  
D
1
D
2
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code  
CF XX  
5
4
G
2
G
1
G
2
Lot Traceability  
and Date Code  
S
2
Part # Code  
S
S
2
1
Top View  
Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
20  
Unit  
V
8
1.3a  
1.3a  
T
C = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
1.3a, b, c  
TA = 25 °C  
TA = 70 °C  
1.3a, b, c  
4
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
1.0  
0.61b, c  
1.25  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
C = 70 °C  
T
0.8  
PD  
Maximum Power Dissipation  
W
0.74b, c  
0.47b, c  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
130  
Maximum  
170  
Unit  
t 5 sec  
Steady State  
°C/W  
RthJF  
80  
100  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 Board.  
c. t = 5 sec.  
d. Maximum under Steady State conditions is 220 °C/W.  
Document Number: 74296  
S-62109-Rev. A, 23-Oct-06  
www.vishay.com  
1

SI1988DH-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI1988DH-T1-GE3 VISHAY

完全替代

DUAL N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SI1922EDH-T1-GE3 VISHAY

完全替代

MOSFET N-CH 20V DUAL SOT-363

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