Datasheet > SI2102AHE3

SI2102AHE3

更新时间： 2024-11-16 14:54:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
5页	940K
描述
Tape: 3K/Reel, 120K/Ctn.;

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中文翻译

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数据手册

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SI2102AHE3 数据手册

SI2102AHE3

Features

• AEC-Q101 Qualified

• High Density Cell Design for Low R

DS(ON)

• Voltage Controlled Small Signal Switch

• Epoxy Meets UL 94 V-0 Flammability Rating

• Halogen Free. “Green” Device ⁽¹⁾

• Moisture Sensitivity Level 1

1ꢁ&KDQQHO

026)(7

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

• Operating Junction Temperature Range: -55°C to +150°C

• Storage Temperature: -55°C to +150°C

SOT-323

• Thermal Resistance: 350°C/W Junction to Ambient

Parameter

Drain-Source Voltage

Rating

Symbol

V_DS

Unit

Gate-Source Volltage

V_GS

±10

T_A=25°C

I_D

Continuous Drain Current

T_A=70°C

1.7

Pulsed Drain Current ^{(Note 2)}

Total Power Dissipation

I_DM

P_D

350

DIMENSIONS

MIN MAX MIN MAX

0.071 0.087 1.80 2.20

0.045 0.053 1.15 1.35

0.083 0.096 2.10 2.45

1. Halogen free "Green” products are defined as those which contain <900ppm

bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony

compounds.

INCHES

DIM

NOTE

TYP.

2. Repetitive rating; pulse width limited by max. junction temperature.

0.026

0.65

0.047 0.055 1.20 1.40

0.012 0.016 0.30 0.40

0.000 0.004 0.00 0.10

0.035 0.044 0.90 1.10

0.002 0.010 0.05 0.25

0.006 0.016 0.15 0.40

0.010 0.018 0.26 0.46

,QWHUQDOꢀ6WUXFWXUH and Marking Code

1. GATE

2. SOURCE

3. DRAIN

TS2.

4VHHFTUFEꢀ4PMEFSꢀ1BEꢀ-BZPVU

0.70

(mm)

0.90

1.90

0.65

Rev.3-1-04122022

1/5

MCCSEMI.COM

12 3 4 5

中文翻译

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