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SI2102A PDF预览

SI2102A

更新时间: 2024-11-16 14:50:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 1488K
描述
Tape: 3K/Reel, 120K/Ctn.;

SI2102A 数据手册

 浏览型号SI2102A的Datasheet PDF文件第2页浏览型号SI2102A的Datasheet PDF文件第3页浏览型号SI2102A的Datasheet PDF文件第4页 
SI2102A  
Features  
Leading Trench Technology for Low RDS(on)  
High Speed Switching  
Epoxy Meets UL 94 V-0 Flammability Rating  
N-CHANNEL  
MOSFET  
Moisture Sensitivity Level 1  
Halogen Free. “Green” Device (Note 1)  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
Storage Temperature Range: -55°C to +150°C  
SOT-323  
Thermal Resistance: 625°C/W Junction to Ambient  
Parameter  
Rating  
20  
Symbol  
VDS  
VGS  
ID  
Unit  
V
A
D
Drain-Source Voltage  
Gate-Source Volltage  
Continuous Drain Current  
Pulsed Drain Current  
Total Power Dissipation  
±10  
3.0  
V
3
A
C
B
1
2
IDM  
14  
A
F
E
H
PD  
W
0.2  
J
G
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,  
K
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  
L
DIMENSIONS  
MM  
MIN MAX MIN MAX  
0.071 0.087 1.80 2.20  
0.045 0.053 1.15 1.35  
0.083 0.096 2.10 2.45  
INCHES  
DIM  
NOTE  
Internal Structure and Marking Code  
A
B
C
D
E
F
G
H
J
D
O
0.026  
0.65  
TYP.  
1. GATE  
0.047 0.055 1.20 1.40  
0.012 0.016 0.30 0.40  
0.000 0.004 0.00 0.10  
0.035 0.044 0.90 1.10  
0.002 0.010 0.05 0.25  
0.006 0.016 0.15 0.40  
0.010 0.018 0.26 0.46  
2. SOURCE  
TS2.  
3. DRAIN  
G
S
K
L
4VHHFTUFEꢀ4PMEFSꢀ1BEꢀ-BZPVU  
0.70  
(mm)  
0.90  
1.90  
0.65  
0.65  
Rev.3-3-04092022  
1/4  
MCCSEMI.COM  

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