Datasheet > SI1926DL_10

SI1926DL_10

更新时间： 2024-11-15 09:26:15

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威世 - VISHAY		/
页数	文件大小	规格书
11页	227K
描述
Dual N-Channel 60 V (D-S) MOSFET

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SI1926DL_10 数据手册

Si1926DL

Vishay Siliconix

Dual N-Channel 60 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

ESD Protected: 1800 V

Compliant to RoHS Directive 2002/95/EC

1.4 at V_GS= 10 V

3.0 at V_GS= 4.5 V

0.37

0.25

•

0.47

APPLICATIONS

SOT-363

SC-70 (6-LEADS)

•

Low Power Load Switch

Marking Code

PD XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

0.37

0.30

Continuous Drain Current (T_J= 150 °C)

I_D

0.34^{b, c}

0.27^{b, c}

0.65

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

0.43

0.25^{b, c}

Continuous Source-Drain Diode Current

_C= 25 °C

_C= 70 °C

0.51

0.33

P_D

Maximum Power Dissipation

0.30^{b, c}

0.20^{b, c}

- 55 to 150

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

360

Maximum

415

Unit

t ≤ 5 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

300

350

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 400 °C/W.

Document Number: 73684

S10-0792-Rev. D, 05-Apr-10

www.vishay.com

12 3 4 5 6 7...11

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