Datasheet > SI1917EDH_08

SI1917EDH_08

更新时间： 2024-11-15 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	72K
描述
Dual P-Channel 12-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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SI1917EDH_08 数据手册

Si1917EDH

Vishay Siliconix

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 3000 V

V_DS(V)

r_DS(on)(W)

I_D(A)

D Thermally Enhanced SC-70 Package

APPLICATIONS

0.370 @ V = –4.5 V

–1.15

–0.92

–0.78

–12

0.575 @ V = –2.5

D Load Switching

D PA Switch

0.800 @ V = –1.8

D Level Switch

SOT-363

SC-70 (6-LEADS)

3 kW

Marking Code

DB XX

Lot Traceability

and Date Code

Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–12

"12

= 25_C

= 85_C

–1.00

–0.73

–1.15

–0.83

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–3

Continuous Diode Current (Diode Conduction)

–0.61

0.73

0.38

–0.47

0.57

0.30

= 25_C

= 85_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

170

220

100

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71414

S-03174—Rev. A, 07-Mar-01

www.vishay.com

12 3 4 5 6

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