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SI1905BDH

更新时间： 2024-11-14 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	142K
描述
Dual P-Channel 1.8-V (G-S) MOSFET

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New Product

Si1905BDH

Vishay Siliconix

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)

0.542 at V_GS= - 4.5 V

0.798 at V_GS= - 2.5 V

1.2 at V_GS= - 1.8 V

- 0.63

- 0.52

- 0.20

RoHS

APPLICATIONS

• Load Switch for Portable Devices

- 8

10.5 nC

COMPLIANT

SOT-363

SC-70 (6-LEADS)

Marking Code

DJ XX

Lot Traceability

and Date Code

Part #

Code

Top View

Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 8

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

- 0.63

- 0.50

- 0.58^{a, b}

- 0.47^{a, b}

- 1.8

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current^{a, b}

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

- 0.30

- 0.25^{a, b}

0.357

_C= 70 °C

_A= 25 °C

- 0.301

Maximum Power Dissipation^{a, b}

P_D

0.301^{a, b}

0.95^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

360

400

300

415

460

350

Maximum Junction-to-Ambient^{a, c}

R_thJA

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under Steady State conditions is 400 °C/W.

Document Number: 74638

S-72340-Rev. B, 05-Nov-07

www.vishay.com

12 3 4 5 6 7

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