Datasheet > SI1906DL-T1

SI1906DL-T1

更新时间： 2024-11-15 07:21:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	80K
描述
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

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SI1906DL-T1 数据手册

Si1906DL

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(mA)

2.0 @ V = 4.5 V

250

150

2.5 @ V = 2.5 V

SOT-363

SC-70 (6-Leads)

Marking Code

PC XX

Lot Traceability

and Date Code

Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

= 25_C

= 70_C

250

200

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

500

= 25_C

= 70_C

0.20

Maximum Power Dissipation

0.13

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

625

_C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 71305

S-01885—Rev. A, 28-Aug-00

www.vishay.com

12 3 4 5

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