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SHD419203 PDF预览

SHD419203

更新时间： 2024-11-28 21:16:51
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
2页 155K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, LCC-3

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SHD419203 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DLCC
包装说明：HERMETIC SEALED, CERAMIC, LCC-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.85
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：10JESD-30 代码：R-CBCC-N3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

SHD419203 数据手册

 浏览型号SHD419203的Datasheet PDF文件第2页 
SHD419203  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 945, REV. A  
Formerly part number SHD4193  
PNP BI-POLAR POWER TRANSISTOR  
• Hermetic, Ceramic Package  
• Electrically Equivalent to 2N3741  
• Surface Mount Package  
Absolute Maximum Ratings*  
Symbol  
TA = 25°C unless otherwise noted  
Parameter  
Value  
80  
80  
Units  
V
V
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Continuous  
Base Current  
7.0  
V
4.0  
A
IB  
2.0  
A
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
TA = 25°C unless otherwise noted  
Characteristic  
Max  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
19  
0.15  
6.5  
W
W/°C  
°C/W  
RθJC  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min Max  
Units  
OFF CHARACTERISTICS  
VCEO  
IEBO  
ICEX  
Collector-Emitter Sustain Voltage  
IC = 100 mA, IB = 0  
VEB = 7.0 Vdc  
VCE = 80Vdc, VBE(OFF)  
1.5Vdc  
80  
-
-
-
V
mA  
µA  
Emitter-Base Cut-off Current  
Collector Cutoff Current  
0.5  
100  
=
=
VCE = 60Vdc, VBE(OFF)  
1.0  
mA  
1.5Vdc, TC = 150°C  
VCE = 60Vdc, IB = 0  
VCE = 80 Vdc, IE = 0  
ICEO  
ICBO  
Emitter-Base Breakdown Voltage  
Base Cut off Current  
-
-
1.0  
100  
mA  
µA  
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•  
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •  
12

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