Datasheet > SHD426009

SHD426009

更新时间： 2024-11-29 06:31:55

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	152K
描述
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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SHD426009 数据手册

SHD426009

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4291, REV. -

PNP POWER TRANSISTOR

• Hermetic Package

• Generic Part Number 2N5153

• JANTX Screening (S-100) available, add an “S” to the end of the part number

• JANS Screening (SS-100) Available, add an “SS” to the end of the part number

Absolute Maximum Ratings*

Symbol

T_A= 25°C unless otherwise noted

Parameter

Value

100

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating Junction Temperature Range

Storage Temperature Range

5.5

2.0

T_J

T_stg

-65 to +200

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

T_C= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

11.8

66.7

mW/°C

°C/W

R_θJC

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

I_EBO1

I_EBO2

I_CES1

I_CES2

I_CEO

Collector-Base Breakdown Voltage

I_C= 100mA, I_B= 0, pulsed

_EB= 4V, I_C= 0

V_EB= 5.5V, I_C= 0

_CE= 60V, V_BE= 0

V_CE= 100V, V_BE= 0

V_CE= 40V, I_B= 0

Base-Emitter Cutoff Current

1.0

µA

Collector-Emitter Cutoff Current

I_CEX

V_CE= 60V, V_BE= 2V, T_C= 150°C

500

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与SHD426009相关器件

型号	品牌	获取价格	描述	数据表
SHD426009S	SENSITRON	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AA, HERMET
SHD426009SS	SENSITRON	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AA, HERMET
SHD4261	SENSITRON	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD426110	SENSITRON	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMET
SHD426110S	SENSITRON	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMET
SHD426110SS	SENSITRON	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMET
SHD4261B	SENSITRON	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4261C	SENSITRON	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4261S	SENSITRON	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4262B	SENSITRON	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3