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SHD430102Q PDF预览

SHD430102Q

更新时间: 2024-11-28 20:02:19
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 57K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, CERAMIC, LCC-28

SHD430102Q 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:CHIP CARRIER, R-CQCC-N28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.88最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:40 V配置:SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE):50JESD-30 代码:R-CQCC-N28
元件数量:4端子数量:28
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

SHD430102Q 数据手册

 浏览型号SHD430102Q的Datasheet PDF文件第2页浏览型号SHD430102Q的Datasheet PDF文件第3页 
SHD430102Q  
SENSITRON  
__  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 916, REV. -  
QUAD NPN SMALL SIGNAL TRANSISTOR  
DESCRIPTION: NPN QUAD SMALL SIGNAL TRANSISTORS (2N2222) IN A CERAMIC LCC-28T PACKAGE.  
MAXIMUM RATINGS  
RATING  
(ALL RATINGS ARE @ T = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)  
A
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
40  
Vdc  
Collector-Emitter Voltage  
(VCEO  
(VCBO  
(VEBO  
(IC)  
PD @ TC = 25°C  
)
-
-
-
-
-
-
-
-
-
-
-
-
75  
6.0  
800  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
)
)
mAdc  
Collector Current-Continuous  
625  
.0036  
mW  
mW/°C  
Total Power Dissipation  
Derate above 25°C  
-
-
-
-
-
280  
+200  
Thermal Resist. Junction to Case  
Operating Junction  
and Storage Temp.  
(RθJC  
)
°C/W  
°C  
-65  
(TJ & Tstg)  
ELECTRICAL CHARACTERISTICS  
(ALL ELECTRICAL CHARACTERISTICS T = 25°C)  
A
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage V(BR)CEO (1)  
40  
75  
-
-
-
-
-
-
Vdc  
Vdc  
Vdc  
IC = 10mAdc, IB = 0  
IC = 10µAdc, IE = 0  
IE = 10µAdc, IC = 0  
VCB = 60Vdc, IE = 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V(BR)CBO  
V(BR)EBO  
(ICBO  
6.0  
-
-
-
-
0.01  
10  
µAdc  
µAdc  
)
VCB = 60Vdc, IE = 0,  
TA = 150°C  
-
-
10  
nAdc  
Collector Cutoff Current  
(ICEX  
)
VCE = 60Vdc, IC = 0,  
VEB(off) = 3.0Vdc  
ON CHARACTERISTICS  
DC Current Gain  
(hFE) IC = 0.1 mAdc  
IC = 1.0 mAdc  
35  
50  
75  
100  
40  
-
-
VCE = 10Vdc  
IC = 10 mAdc (1)  
IC = 150 mAdc (1)  
IC = 500 mAdc (1)  
300  
-
SMALL-SIGNAL CHARACTERISTICS  
Current Gain, Bandwidth  
VCE = 20Vdc, IC =  
20mAdc,  
f = 100MHz  
300  
-
-
-
MHz  
pF  
(2)  
(fT)  
Output Capacitance (Cobo  
)
VCB = 10Vdc, IE =0,  
f = 1.0 MHz  
8.0  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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