Datasheet > SHD431006

SHD431006

更新时间： 2024-09-22 07:43:15

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	48K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3

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SHD431006 数据手册

SHD431006

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 678, REV. -

PNP SWITCHING TRANSISTOR

SHD431006S -- S-100 (JANTX) Screening

• Hermetic, Ceramic Package

• Electrically Equivalent to 2N3906

• Surface Mount Package

Absolute Maximum Ratings*

Symbol

T_A= 25°C unless otherwise noted

Parameter

Value

-40

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating and Storage Junction Temperature Range

-5.0

200

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol Characteristic

T_A= 25°C unless otherwise noted

Max

Units

P_D

R_θJC

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

690

5.55

180

mW/°C

°C/W

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CES

Collector-Emitter Breakdown Voltage*

I_C= 1.0 mA, I_B= 0

I_C= 10 µA, I_E= 0

I_E= 10 µA, I_C= 0

V_CE=-30V, V_BE= -3.0

V_CE= -30 V, V_BE= -3.0

-40

-5.0

Collector-Base Breakdown Voltage*

Emitter-Base Breakdown Voltage*

Collector Cutoff Current

-50

I_B

Base Cut off Current

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