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SHD432102DS PDF预览

SHD432102DS

更新时间: 2024-09-21 20:01:23
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 159K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, CERAMIC, LCC-6

SHD432102DS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:SMALL OUTLINE, R-CDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.86
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):40
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

SHD432102DS 数据手册

 浏览型号SHD432102DS的Datasheet PDF文件第2页浏览型号SHD432102DS的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
SHD432102D  
TECHNICAL DATA  
DATA SHEET 952, REV. A  
Formerly Part Number SHD4322  
DUAL SMALL SIGNAL HIGH SPEED  
SWITCHING TRANSISTOR  
Add Suffix “S” for S-100 Screening  
DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.  
MAXIMUM RATINGS  
RATING  
(ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED).  
A
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
40  
Vdc  
Collector-Emitter Voltage  
(VCEO  
(VCBO  
(VEBO  
)
-
-
-
-
-
-
-
-
-
-
-
-
75  
6.0  
800  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
)
)
mAdc  
Collector Current-Continuous  
(IC)  
Total Power Dissipation, For each device  
For each device  
PT @ TA=25°C  
0.90  
1.78  
W
W
Derate above 25 °C  
mW/°C  
°C/W  
°C  
0.005  
125  
+150  
-
-
-
-
-
Thermal Resist. Junction to Case  
Operating Junction  
and Storage Temp.  
RθJC  
-65  
(TJ & Tstg)  
ELECTRICAL CHARACTERISTICS  
(ALL ELECTRICAL CHARACTERISTICS T = 25°C)  
A
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage V(BR)CEO (1)  
40  
75  
6.0  
-
-
-
-
-
-
-
-
Vdc  
Vdc  
Vdc  
IC = 10mAdc, IB = 0  
IC = 10µAdc, IE = 0  
IE = 10µAdc, IC = 0  
VCB = 60Vdc, IE = 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V(BR)CBO  
V(BR)EBO  
(ICBO  
-
0.01  
10  
µAdc  
µAdc  
)
-
VCB = 60Vdc, IE = 0,  
TA = 150°C  
-
-
10  
nAdc  
Collector Cutoff Current  
(ICEX  
)
VCE = 60Vdc, IC = 0,  
VEB(off) = 3.0Vdc  
ON CHARACTERISTICS  
DC Current Gain  
(hFE) IC = 0.1 mAdc  
IC = 1.0 mAdc  
35  
50  
75  
100  
40  
-
-
-
-
VCE = 10Vdc  
IC = 10 mAdc (1)  
IC = 150 mAdc (1)  
IC = 500 mAdc (1)  
-
300  
-
Collector to Emitter Saturation Voltage (VCE(sat)  
)
IC=150mAdc,  
IB=15mAdc  
IC=500mAdc,  
IB=50mAdc  
-
-
-
-
0.3  
1.0  
Vdc  
Vdc  
Base to Emitter Saturation Voltage  
(VBE(sat)  
)
IC=150mAdc,  
IB=15mAdc  
IC=500mAdc,  
IB=50mAdc  
-
-
0.6  
-
1.2  
2.0  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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