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SHD432103 PDF预览

SHD432103

更新时间: 2024-11-28 20:48:07
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 51K
描述
Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 2-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC-6

SHD432103 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:SMALL OUTLINE, R-CDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.88最大集电极电流 (IC):2 A
集电极-发射极最大电压:120 V配置:SEPARATE, 2 ELEMENTS
JESD-30 代码:R-CDSO-N6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):175 MHz
Base Number Matches:1

SHD432103 数据手册

 浏览型号SHD432103的Datasheet PDF文件第2页浏览型号SHD432103的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
SHD432103  
TECHNICAL DATA  
DATASHEET 756, REV. –  
NPN MEDIUM POWER TRANSISTOR  
DESCRIPTION: DUAL NPN TRANSISTORS IN AN LCC-6 HERMETIC CERAMIC PACKAGE.  
MAXIMUM RATINGS  
(ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED).  
A
RATING  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
120  
V
Collector-Emitter Voltage  
(VCEO  
(VCBO  
(VEBO  
)
-
-
-
-
-
-
100  
5.0  
6
V
V
A
A
Collector-Base Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
)
)
(ICM)  
(IC)  
-
-
-
2
Collector Current-Continuous  
ELECTRICAL CHARACTERISTICS  
RATING  
Collector-Emitter Breakdown Voltage* V(BR)CEO  
(ALL ELECTRICAL CHARACTERISTICS T = 25°C)  
A
CONDITIONS  
IC = 100µA  
V(BR)CBO IC = 10mA  
V(BR)EBO  
MIN.  
120  
TYP.  
-
MAX.  
UNITS  
-
V
100  
5.0  
-
-
-
-
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IE = 100µA  
Collector-Emitter Saturation Voltage*  
V(CE)SAT IC = 1A, IB = 100mA  
IC = 2A, IB = 200mA  
0.13  
0.23  
0.9  
0.3  
0.5  
1.25  
V
V
Base-Emitter Saturation Voltage*  
Base-Emitter Turn-On Voltage*  
Emitter Cutoff Current  
V(BE)SAT IC = 1A, IB = 100mA  
V(BE)ON IC = 1A, VCE = 2V  
0.8  
1
0.1  
0.1  
µA  
(IEBO  
)
VEB = 4V  
-
-
Collector Cutoff Current  
(ICBO  
)
VCB=100V  
T
AMB=25oC  
µA  
VCB=100V  
TAMB=100oC  
10  
30  
140  
175  
MHz  
ns  
Transition Frequency  
Switching Time  
(FT)  
IC = 100mA,  
VCE=5V, F=100MHz  
(TON) IC=500mA,  
(TOFF) VCC=10V,  
IB1=I B2=50mA  
80  
1200  
pf  
Output Capacitance  
(COBO  
)
VCB=10V, f=1MHz  
*Measured under pulse conditions. Pulse width = 300µs. Duty Cycle 2%  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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