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SHD444001 PDF预览

SHD444001

更新时间: 2024-11-28 21:03:51
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 154K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, LCC-4

SHD444001 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:SMALL OUTLINE, R-CDSO-N4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.88最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):75JESD-30 代码:R-CDSO-N4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

SHD444001 数据手册

 浏览型号SHD444001的Datasheet PDF文件第2页浏览型号SHD444001的Datasheet PDF文件第3页 
SHD444001  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 224, REV –  
Formerly part number SHD4461  
SMALL SIGNAL TRANSISTOR  
DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN A PACKAGE.  
MAXIMUM RATINGS  
(ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED).  
A
RATING  
CONDITIONS  
-
MIN.  
-
TYP.  
-
MAX.  
-60  
UNITS  
Vdc  
Collector-Emitter Voltage  
(VCEO  
(VCBO  
(VEBO  
)
-
-
-
-
-
-
-
-
-
-
-
-
-60  
-5.0  
-600  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
)
)
mAdc  
Collector Current-Continuous  
(IC)  
800  
4.55  
mW  
mW/°C  
Total Power Dissipation PD @ TC = 25°C  
Derate above 25°C  
-
-
-
-
-
220  
+200  
Thermal Resist. Junction to Case  
Operating Junction  
and Storage Temp.  
RθJC  
°C/W  
°C  
-65  
(TJ & Tstg)  
ELECTRICAL CHARACTERISTICS  
OFF CHARACTERISTICS  
(ALL ELECTRICAL CHARACTERISTICS T = 25°C)  
A
Collector-Emitter Breakdown Voltage V(BR)CEO (1)  
-60  
-60  
-5.0  
-
-
-
-
-
-
Vdc  
Vdc  
Vdc  
IC = -10mAdc, IB = 0  
IC = -10µAdc, IE = 0  
IE = -10µAdc, IE = 0  
VCB = -50Vdc, IE = 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V(BR)CBO  
V(BR)EBO  
(ICBO  
-
-
-
-
-0.01  
-10  
µAdc  
µAdc  
)
VCB = -50Vdc, IE = 0,  
TA = 150°C  
ON CHARACTERISTICS  
DC Current Gain  
(hFE)  
IC = 0.1 mAdc,  
VCE = -10Vdc  
35  
75  
-
-
-
IC = -10 mAdc,  
VCE = -10Vdc  
-
-
-
-
300  
-
IC = -150 mAdc,  
100  
30  
VCE = -10Vdc(1)  
IC = -500 mAdc,  
VCE = -10Vdc(1)  
Collector-Emitter Saturation Voltage(1)  
(IC = -150mAdc, IB = -15mAdc)  
(IC = -500mAdc, IB = -50mAdc)  
VCE(sat)  
Vdc  
Vdc  
-0.4  
-1.6  
-
-
-
-
Base-Emitter Saturation Voltage  
(IC = -150mAdc, IB = -15mAdc)(1)  
(IC = -500mAdc, IB = -50mAdc)(1)  
VBE(sat)  
-1.3  
-2.6  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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