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SHD431101ST PDF预览

SHD431101ST

更新时间： 2024-11-28 21:06:11
品牌 Logo 应用领域
SENSITRON 开关晶体管
页数 文件大小 规格书
2页 35K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC-3

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SHD431101ST 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DLCC
包装说明：SMALL OUTLINE, R-CDSO-N3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.85
最大集电极电流 (IC)：0.2 A集电极-发射极最大电压：15 V
配置：SINGLE最小直流电流增益 (hFE)：20
JESD-30 代码：R-CDSO-N3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：18 ns最大开启时间（吨）：12 ns
Base Number Matches：1

SHD431101ST 数据手册

 浏览型号SHD431101ST的Datasheet PDF文件第2页 
SHD431101  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 645, REV. B  
NPN SWITCHING TRANSISTOR  
SHD431101S -- S-100 (JANTX) Screening  
SHD431101ST -- S-100 (JANTX) Screening, Solder dipped  
• Hermetic, Ceramic Package  
• Electrically Equivalent to MMBT2369A  
• Surface Mount  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
15  
40  
4.5  
V
V
V
mA  
°C  
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Continuous  
Operating and Storage Junction Temperature Range  
200  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Unit  
s
PD  
Total Device Dissipation  
Derate above 25°C  
650  
5.23  
mW  
mW/°  
C
Thermal Resistance, Junction to Case  
191  
°C/W  
RθJC  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CES  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
IC = 10 mA, IB = 0  
IC = 10 µA,VBE = 0  
IC = 10 µA, IE = 0  
IE = 10 µA, IC = 0  
VCB =20 V, IE = 0  
15  
40  
40  
4.5  
-
-
-
V
V
V
V
µA  
µA  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-
0.4  
30  
VCB =20 V, IE = 0, TA = 125°C  
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•  
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •  
12

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