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SHD432001S PDF预览

SHD432001S

更新时间： 2024-09-21 20:44:59
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
2页 154K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, CERAMIC, LCC-6

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SHD432001S 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：LCC
包装说明：SMALL OUTLINE, R-CDSO-N6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.86最大集电极电流 (IC)：0.6 A
集电极-发射极最大电压：60 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：50JESD-30 代码：R-CDSO-N6
元件数量：2端子数量：6
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：200 MHz最大关闭时间（toff）：110 ns
最大开启时间（吨）：50 nsBase Number Matches：1

SHD432001S 数据手册

 浏览型号SHD432001S的Datasheet PDF文件第2页 
SHD432001  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 381, REV –  
Formerly part number – SHD4321  
SMALL SIGNAL TRANSISTOR  
Add Suffix “S” for S-100 Screening  
DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6  
PACKAGE.  
MAXIMUM RATINGS  
RATING  
(ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED).  
A
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-60  
Vdc  
Collector-Emitter Voltage  
(VCEO  
(VCBO  
(VEBO  
(IC)  
)
-
-
-
-
-
-
-
-
-
-
-
-
-60  
-5.0  
-600  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
)
)
mAdc  
Collector Current-Continuous  
1.18  
2.36  
6.75  
W
W
mW/°C  
Power Dissipation/Transistor (PD @ TC = 25°C)  
Total Device Power Dissipation  
Derate above 25°C (per transistor)  
-
-
-
-
-
148  
Thermal Resist. Junction to Case  
(per transistor)  
Operating Junction  
RθJC  
°C/W  
°C  
-65  
+200  
and Storage Temp.  
(TJ & Tstg)  
ELECTRICAL CHARACTERISTICS  
(ALL ELECTRICAL CHARACTERISTICS T = 25°C)  
A
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage V(BR)CEO (1)  
-60  
-60  
-5.0  
-
-
-
-
-
-
-
Vdc  
Vdc  
Vdc  
IC = -10mAdc, IB = 0  
IC = -10µAdc, IE = 0  
IE = -10µAdc, IC = 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V(BR)CBO  
V(BR)EBO  
(ICEX  
-
-50  
)
VCE = -30Vdc,  
VEB = -0.5Vdc  
nAdc  
-
-
-0.01  
-10  
Collector Cutoff Current  
(ICBO  
)
VCB = -50Vdc, IE = 0  
VCB = -50Vdc, IE = 0,  
TA =150°C  
µAdc  
ON CHARACTERISTICS  
DC Current Gain  
(hFE)  
(VCE = -10Vdc)  
IC = -0.1 mAdc  
IC = -1.0 mAdc  
IC = -10 mAdc (1)  
IC = -150 mAdc (1)  
IC = -500 mAdc (1)  
75  
100  
100  
100  
50  
-
-
300  
-
SMALL-SIGNAL CHARACTERISTICS  
Current Gain, Bandwidth  
(2)  
VCE = -20Vdc,  
200  
-
-
-
MHz  
pF  
IC = -50mAdc,  
= 100MHz  
f
(fT)  
Output Capacitance  
(Cob)  
VCB = -10Vdc, IE =0,  
f = 1.0 MHz  
8.0  
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•  
• World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com •  
12

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