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SHD431002S PDF预览

SHD431002S

更新时间: 2024-11-28 20:36:27
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 50K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3

SHD431002S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DLCC
包装说明:SMALL OUTLINE, R-CDSO-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.86
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-CDSO-N3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
最大关闭时间(toff):35 ns最大开启时间(吨):25 ns
Base Number Matches:1

SHD431002S 数据手册

 浏览型号SHD431002S的Datasheet PDF文件第2页浏览型号SHD431002S的Datasheet PDF文件第3页 
SHD431002  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 646, REV. A  
PNP SWITCHING TRANSISTOR  
SHD431002S -- S-100 (JANTX) Screening  
Hermetic, Ceramic Package  
Electrically Equivalent to MMBT3640  
Surface Mount Package  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
12  
12  
4.0  
V
V
V
mA  
°C  
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Continuous  
Operating and Storage Junction Temperature Range  
200  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol Characteristic  
TA = 25°C unless otherwise noted  
Max  
Units  
PD  
RθJC  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
650  
5.23  
191  
mW  
mW/°C  
°C/W  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CES  
V(BR)CBO  
V(BR)EBO  
ICES  
Collector-Emitter Breakdown Voltage*  
IC = 10 mA, IB = 0  
IC = 100 µA,VBE = 0  
IC = 100 µA, IE = 0  
IE = 100 µA, IC = 0  
VCE =6.0V, VBE = 0  
VCE =6.0V, VBE = 0,TA = 65°C  
VCE = 6.0 V, VBE = 0  
12  
12  
12  
4.0  
-
-
-
-
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage*  
Emitter-Base Breakdown Voltage*  
Collector Cutoff Current  
-
V
0.01  
1.0  
10  
µA  
µA  
nA  
IB  
Base Current  
-
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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