5秒后页面跳转
SHD426110SS PDF预览

SHD426110SS

更新时间: 2024-09-21 20:57:47
品牌 Logo 应用领域
SENSITRON 局域网晶体管
页数 文件大小 规格书
3页 145K
描述
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

SHD426110SS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-257AA
包装说明:FLANGE MOUNT, S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-257AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SHD426110SS 数据手册

 浏览型号SHD426110SS的Datasheet PDF文件第2页浏览型号SHD426110SS的Datasheet PDF文件第3页 
SHD426110  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4292, REV. -  
NPN POWER TRANSISTOR  
Hermetic Package  
Generic Part Number 2N5154  
JANTX Screening (S-100) available, add an “S” to the end of the part number  
JANS Screening (SS-100) Available, add an “SS” to the end of the part number  
Absolute Maximum Ratings*  
Symbol  
TA = 25°C unless otherwise noted  
Parameter  
Value  
80  
100  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Continuous  
Operating Junction Temperature Range  
Storage Temperature Range  
5.5  
V
2.0  
A
TJ  
Tstg  
-65 to +200  
-65 to +200  
°C  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
TC = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
11.8  
66.7  
15  
W
mW/°C  
°C/W  
RθJC  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
IEBO1  
IEBO2  
ICES1  
ICES2  
ICEO  
Collector-Base Breakdown Voltage  
IC = 100mA, IB = 0, pulsed  
EB = 4V, IC = 0  
VEB = 5.5V, IC = 0  
80  
-
-
-
-
-
V
Base-Emitter Cutoff Current  
V
1.0  
1.0  
1.0  
1.0  
50  
µA  
mA  
µA  
mA  
µA  
µA  
Collector-Emitter Cutoff Current  
VCE = 60V, VBE = 0  
V
CE = 100V, VBE = 0  
VCE = 40V, IB = 0  
VCE = 60V, VEB = 2V, TC = 150°C  
-
-
ICEX  
500  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

与SHD426110SS相关器件

型号 品牌 获取价格 描述 数据表
SHD4261B SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4261C SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4261S SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4262B SENSITRON

获取价格

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD4262C SENSITRON

获取价格

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3
SHD426306 SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMET
SHD426306S SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, HERMET
SHD4263C SENSITRON

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Metal, 3
SHD4264B SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Metal,
SHD4264C SENSITRON

获取价格

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Metal,