是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-257 | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD4264S | SENSITRON |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Metal, | |
SHD430001Q | SENSITRON |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, CERAMIC | |
SHD4301 | SENSITRON |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD430102Q | SENSITRON |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, CERAMIC | |
SHD4301S | SENSITRON |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD4302 | SENSITRON |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD430203 | SENSITRON |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, Ceramic, Metal-Sealed Cofir | |
SHD430204 | SENSITRON |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, PNP, Silicon, Ceramic, Metal-Sealed Cofi | |
SHD4302S | SENSITRON |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD4303 | SENSITRON |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-S |