是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.64 |
外壳连接: | COLLECTOR | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 1.5 V |
门极-发射极最大电压: | 6 V | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 45 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | GENERAL PURPOSE SWITCHING | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1200 ns | 标称接通时间 (ton): | 1480 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SGR15N40LTF | FAIRCHILD |
类似代替 |
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-252, DPAK-3 | |
CT20ASJ-8 | MITSUBISHI |
功能相似 |
STROBE FLASHER USE | |
SGR15N40L | FAIRCHILD |
功能相似 |
General Description |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGR20N40L | FAIRCHILD |
获取价格 |
High input impedance | |
SGR20N40LTF | FAIRCHILD |
获取价格 |
暂无描述 | |
SGR20N40LTF | ROCHESTER |
获取价格 |
400V, N-CHANNEL IGBT, TO-252, DPAK-3 | |
SGR20N40LTM | ROCHESTER |
获取价格 |
400V, N-CHANNEL IGBT, TO-252, DPAK-3 | |
SGR2N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGR2N60UFD | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGR2N60UFDTF | ROCHESTER |
获取价格 |
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | |
SGR2N60UFDTF | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | |
SGR2N60UFDTM | ROCHESTER |
获取价格 |
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | |
SGR2N60UFTF | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 |