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SGR15N40LTM PDF预览

SGR15N40LTM

更新时间: 2024-11-08 13:02:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关双极性晶体管通用开关
页数 文件大小 规格书
7页 170K
描述
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-252, DPAK-3

SGR15N40LTM 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.64
外壳连接:COLLECTOR集电极-发射极最大电压:400 V
配置:SINGLE门极发射器阈值电压最大值:1.5 V
门极-发射极最大电压:6 VJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:GENERAL PURPOSE SWITCHING晶体管元件材料:SILICON
标称断开时间 (toff):1200 ns标称接通时间 (ton):1480 ns
Base Number Matches:1

SGR15N40LTM 数据手册

 浏览型号SGR15N40LTM的Datasheet PDF文件第2页浏览型号SGR15N40LTM的Datasheet PDF文件第3页浏览型号SGR15N40LTM的Datasheet PDF文件第4页浏览型号SGR15N40LTM的Datasheet PDF文件第5页浏览型号SGR15N40LTM的Datasheet PDF文件第6页浏览型号SGR15N40LTM的Datasheet PDF文件第7页 
IGBT  
SGR15N40L / SGU15N40L  
General Description  
Features  
Insulated Gate Bipolar Transistors (IGBTs) with a trench  
gate structure provide superior conduction and switching  
performance in comparison with transistors having a planar  
gate structure. They also have wide noise immunity. These  
devices are very suitable for strobe applications  
High input impedance  
High peak current capability (130A)  
Easy gate drive  
Application  
Strobe flash.  
C
C
G
D-PAK  
E
G
I-PAK  
G C E  
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGR / SGU15N40L  
Units  
V
V
V
Collector - Emitter Voltage  
400  
± 6  
CES  
GES  
Gate - Emitter Voltage  
V
I
Pulsed Collector Current  
130  
A
CM (1)  
P
M a x i m u m P o w e r D i s s i p a t i o n  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from case for 5 seconds  
@ T = 25°C  
45  
W
C
C
T
-40 to +150  
-40 to +150  
°C  
°C  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
3.0  
50  
θJC  
(D-PAK)  
(I-PAK)  
Thermal Resistance, Junction-to-Ambient (PCB Mount)  
Thermal Resistance, Junction-to-Ambient  
--  
θJA  
θJA  
(2)  
--  
110  
Notes :  
(2) Mounted on 1” square PCB (FR4 or G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
SGR15N40L / SGU15N40L Rev. A1  

SGR15N40LTM 替代型号

型号 品牌 替代类型 描述 数据表
SGR15N40LTF FAIRCHILD

类似代替

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-252, DPAK-3
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STROBE FLASHER USE
SGR15N40L FAIRCHILD

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