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SGR5N60RUFTF PDF预览

SGR5N60RUFTF

更新时间: 2024-09-21 06:40:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD
页数 文件大小 规格书
9页 586K
描述
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3

SGR5N60RUFTF 数据手册

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IGBT  
SGR5N60RUF  
Short Circuit Rated IGBT  
General Description  
Features  
Fairchild's RUF series of Insulated Gate Bipolar Transistors  
(IGBTs) provide low conduction and switching losses as  
well as short circuit ruggedness. The RUF series is  
Short circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.2 V @ I = 5A  
CE(sat)  
C
designed for  
applications such as motor control,  
uninterrupted power supplies (UPS) and general inverters  
where short circuit ruggedness is a required feature.  
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
C
G
D-PAK  
E
G
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGR5N60RUF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
8
A
C
I
I
C
Collector Current  
@ T = 100°C  
5
A
C
Pulsed Collector Current  
15  
10  
A
CM (1)  
T
Short Circuit Withstand Time  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T = 100°C  
us  
W
W
°C  
°C  
SC  
C
P
@ T  
=
25°C  
60  
D
C
@ T = 100°C  
25  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
2.0  
50  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient (PCB Mount)  
--  
(2)  
Notes :  
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  

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