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SGR6N60UFTM PDF预览

SGR6N60UFTM

更新时间: 2024-11-08 19:53:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 电动机控制瞄准线双极性晶体管开关
页数 文件大小 规格书
7页 507K
描述
Discrete, High Performance IGBT, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL

SGR6N60UFTM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DPAK
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.81
其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):150 ns
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):202 ns标称接通时间 (ton):54 ns
Base Number Matches:1

SGR6N60UFTM 数据手册

 浏览型号SGR6N60UFTM的Datasheet PDF文件第2页浏览型号SGR6N60UFTM的Datasheet PDF文件第3页浏览型号SGR6N60UFTM的Datasheet PDF文件第4页浏览型号SGR6N60UFTM的Datasheet PDF文件第5页浏览型号SGR6N60UFTM的Datasheet PDF文件第6页浏览型号SGR6N60UFTM的Datasheet PDF文件第7页 
IGBT  
SGR6N60UF  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UF series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UF series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 3A  
CE(sat)  
C
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
C
G
D-PAK  
E
G
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGR6N60UF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
6
A
C
I
I
C
Collector Current  
@ T = 100°C  
3
A
C
Pulsed Collector Current  
25  
30  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T  
=
25°C  
W
W
°C  
°C  
D
C
@ T = 100°C  
12  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
--  
--  
4.0  
50  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient (PCB Mount)  
(2)  
Notes :  
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
SGR6N60UF Rev. A1  

SGR6N60UFTM 替代型号

型号 品牌 替代类型 描述 数据表
HGTD3N60C3S9A FAIRCHILD

类似代替

6A, 600V, UFS Series N-Channel IGBTs
SGD04N60 INFINEON

功能相似

Fast IGBT in NPT-technology

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