Datasheet > SGR2N60UFDTM

SGR2N60UFDTM

更新时间： 2024-11-09 08:15:27

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		栅
页数	文件大小	规格书
10页	573K
描述
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3

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SGR2N60UFDTM 数据手册

IGBT

SGR2N60UFD

Ultra-Fast IGBT

General Description

Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

•

High speed switching

Low saturation voltage : V

High input impedance

= 2.1 V @ I = 1.2A

CE(sat)

CO-PAK, IGBT with FRD : t = 45ns (typ.)

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

D-PAK

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

SGR2N60UFD

Units

Collector-Emitter Voltage

600

CES

GES

Gate-Emitter Voltage

± 20

Collector Current

@ T

25°C

2.4

Collector Current

@ T = 100°C

1.2

Pulsed Collector Current

CM (1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

@ T = 100°C

1.5

@ T

25°C

°C

@ T = 100°C

-55 to +150

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Typ.

Max.

Units

°C/W

(IGBT)

5.0

θJC

θJA

(DIODE)

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

SGR2N60UFD Rev. A1

12 3 4 5 6 7...10

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