SGA-7489
RoHS Compliant
& Green Package
Product Description
The SGA-7489 is a high performance SiGe HBT
MMIC Amplifier. A Darlington configuration featuring
Pb
SGA-7489Z
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
1 micron emitters provides high F and excellent
T
thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking ca-
pacitors, a bias resistor and an optional RF choke
are required for operation.
Product Features
The matte tin finish on Sirenza’s lead-free package
utilizes a post annealing process to mitigate tin whis-
ker formation and is RoHS compliant per EU Direc-
tive 2002/95. This package is also manufactured
with green molding compounds that contain no an-
timony trioxide nor halogenated fire retardants.
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-3000 MHz Operation
• Very High IF Output IP3: 39dBm at 100MHz
• High Output IP3: +35.5 dBm typ. at 850 MHz
• Low Noise Figure: 3.3 dB typ. at 1950 MHz
Gain, Return Loss, and Isolation vs. Frequency
VD=5.0V, ID=115mA (Typ), TLEAD=+25C
0
30
-5
25
Gain
-10
-15
-20
-25
-30
20
Applications
• Oscillator Amplifiers
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
• LO Driver Amplifier
Input Return
Loss
15
Output
10
Return Loss
5
Isolation
0
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Symbol
Parameter
Freq. (MHz)
Min.
Typ.
Max.
Units
850
1950
22.4
20.0
Output Power at 1dB Compression
dBm
P1dB
18.5
100
850
1950
1950 *
39.0
35.5
33.0
36.0 *
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
OIP3
dBm
31.0
850
1950
20.0
17.0
21.5
18.5
23.0
20.0
Small Signal Gain
dB
S21
Bandwidth
IRL
Determined by Return Loss (>9dB)
Input Return Loss
3000
15.0
11.0
23.0
3.3
MHz
dB
dB
dB
dB
V
1950
1950
1950
1950
10.3
9.0
ORL
Output Return Loss
Reverse Isolation
S12
NF
Noise Figure, ZS = 50 Ohms
Device Operating Voltage
4.3
5.3
127
4.7
5.0
VD
Device Operating Current
103
115
82
mA
ID
RTH, j-l
Thermal Resistance (junction - lead)
o C/W
VS = 8 V
Bias Resistance = 26 Ohms
ID = 115 mA Typ.
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
TL = 25ºC ZS = ZL = 50 Ohms
Test Conditions:
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown
that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable,
however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev D