SGA8343ZLow
Noise, High
Gain SiGe HBT
SGA8343Z
LOW NOISE, HIGH GAIN SiGe HBT
Package: SOT-343
Product Description
Features
RFMD’s SGA8343Z is a high performance Silicon Germanium Hetero- DC to 6GHz Operation
structure Bipolar Transistor (SiGe HBT) designed for operation from DC to
6GHz. The SGA8343Z is optimized for 3V operation but can be biased at
2V for low-voltage battery operated systems. The device provides high
gain, low NF, and excellent linearity at a low cost. It can be operated at
very low bias currents in applications where high linearity is not required.
The matte tin finish on the lead-free package utilizes a post annealing pro-
cess to mitigate tin whisker formation and is RoHS compliant per EU Direc-
0.9dB NFMIN at 0.9GHz
24dB GMAX at 0.9GHz
|GOPT|=0.10 at 0.9GHz
OIP3=+28dBm, P1dB=+9dBm
Low Cost, High Performance, Ver-
satility
tive 2002/95. This package is also manufactured with
green molding compounds that contain no antimony tri-
oxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
Applications
Analog and Digital Wireless Sys-
tems
GaAs MESFET
InGaP HBT
Typical Performance - 3V, 10mA
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
4 0
3 5
3 0
2 5
2 0
1 5
1 0
5
2 .4
2 .1
1 .8
1 .5
1 .2
0 .9
0 .6
0 .3
0
3G, Cellular, PCS, RFID
NFMIN
Gain
Fixed Wireless, Pager Systems
Driver Stage for Low Power Appli-
cations
Gmax
Si BJT
Oscillators
GaN HEMT
InP HBT
0
0
1
2
3
4
5
6
7
8
Frequency (GHz)
RF MEMS
LDMOS
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Maximum Available Gain
Minimum Noise Figure
Insertion Gain
23.9
dB
0.9GHz, Z =Z *, Z =Z *
S S L L
19.3
17.7
0.94
dB
dB
dB
1.9GHz
2.4 GHz
0.9GHz, Z =Gamma , Z =Z *
S
OPT
L
L
1.10
1.18
22.0
dB
dB
dB
1.9GHz
2.4GHz
21.0
23.0
0.9GHz, Z =Z =50
S
L
[2]
[2]
[2]
[2]
Noise Figure
Gain
1.40
16.5
27.8
9.0
1.75
17.5
dB
dB
1.9GHz, LNA Application Circuit Board
1.9GHz, LNA Application Circuit Board
1.9GHz, LNA Application Circuit Board
1.9GHz, LNA Application Circuit Board
15.5
25.8
7.5
Output Third Order Intercept Point
Output 1dB Compression Point
dBm
dBm
DC Current Gain
120
5.7
180
6.0
200
300
Breakdown Voltage
Thermal Resistance
Operating Voltage
Operating Current
V
°C/W
V
collector - emitter
junction - lead
collector - emitter
collector - emitter
4.0
50
mA
Test Conditions =3V, I =10mA, 25°C (unless otherwise noted), [1] 100% tested - Insertion gain tested using a 50W contact board (no matching cir-
CE
CQ
cuitry) during final production test. [2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statisti-
cal data from sample test measurements. The test fixture is an engineering application circuit board (parts are pressed down on the board). The
application circuit represents a trade-off between the optimal noise match and input return loss.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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