Datasheet > SGA8343Z

SGA8343Z

更新时间： 2024-11-27 01:00:11

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
13页	1094K
描述
LOW NOISE, HIGH GAIN SiGe HBT

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SGA8343Z 数据手册

SGA8343ZLow

Noise, High

Gain SiGe HBT

SGA8343Z

LOW NOISE, HIGH GAIN SiGe HBT

Package: SOT-343

Product Description

Features

RFMD’s SGA8343Z is a high performance Silicon Germanium Hetero-  DC to 6GHz Operation

structure Bipolar Transistor (SiGe HBT) designed for operation from DC to

6GHz. The SGA8343Z is optimized for 3V operation but can be biased at

2V for low-voltage battery operated systems. The device provides high

gain, low NF, and excellent linearity at a low cost. It can be operated at

very low bias currents in applications where high linearity is not required.

The matte tin finish on the lead-free package utilizes a post annealing pro-

cess to mitigate tin whisker formation and is RoHS compliant per EU Direc-

 0.9dB NF_MINat 0.9GHz

 24dB GMAX at 0.9GHz

 |GOPT|=0.10 at 0.9GHz

 OIP3=+28dBm, P1dB=+9dBm

 Low Cost, High Performance, Ver-

satility

tive 2002/95. This package is also manufactured with

green molding compounds that contain no antimony tri-

oxide nor halogenated fire retardants.

Optimum Technology

Matching® Applied

GaAs HBT

Applications

 Analog and Digital Wireless Sys-

tems

GaAs MESFET

InGaP HBT

Typical Performance - 3V, 10mA

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

4 0

3 5

3 0

2 5

2 0

1 5

1 0

2 .4

2 .1

1 .8

1 .5

1 .2

0 .9

0 .6

0 .3

 3G, Cellular, PCS, RFID

NF_MIN

Gain



 Fixed Wireless, Pager Systems

 Driver Stage for Low Power Appli-

cations

Gmax

Si BJT

 Oscillators

GaN HEMT

InP HBT

Frequency (GHz)

RF MEMS

LDMOS

Specification

Typ.

Parameter

Unit

Condition

Min.

Max.

Maximum Available Gain

Minimum Noise Figure

Insertion Gain

23.9

0.9GHz, Z =Z *, Z =Z *

S S L L

19.3

17.7

0.94

1.9GHz

2.4 GHz

0.9GHz, Z =Gamma , Z =Z *

OPT

1.10

1.18

22.0

1.9GHz

2.4GHz



21.0

23.0

0.9GHz, Z =Z =50

[2]

Noise Figure

Gain

1.40

16.5

27.8

9.0

1.75

17.5

1.9GHz, LNA Application Circuit Board

15.5

25.8

7.5

Output Third Order Intercept Point

Output 1dB Compression Point

dBm

DC Current Gain

120

5.7

180

6.0

200

300

Breakdown Voltage

Thermal Resistance

Operating Voltage

Operating Current

°C/W

collector - emitter

junction - lead

collector - emitter

4.0

Test Conditions =3V, I =10mA, 25°C (unless otherwise noted), [1] 100% tested - Insertion gain tested using a 50W contact board (no matching cir-

cuitry) during final production test. [2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statisti-

cal data from sample test measurements. The test fixture is an engineering application circuit board (parts are pressed down on the board). The

application circuit represents a trade-off between the optimal noise match and input return loss.

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110620

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与SGA8343Z相关器件

型号	品牌	获取价格	描述	数据表
SGA-8343Z	SIRENZA	获取价格	Low Noise, High Gain SiGe HBT
SGA8343ZPCK1	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK2	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK3	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK4	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZSQ	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZSR	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8543Z	RFMD	获取价格	HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
SGA-8543Z	SIRENZA	获取价格	High IP3 Medium Power Discrete SiGe Transistor
SGA8543Z-EVB1	RFMD	获取价格	HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

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