SGA-9089Z
High IP3
,
MediumPower
Discrete SiGe
Transistor
SGA-9089Z
HIGH IP , MEDIUM POWER DISCRETE SiGe
3
TRANSISTOR
Package: SOT-89
Product Description
Features
RFMD’s SGA-9089Z is a high performance Silicon Germanium Hetero-
structure Bipolar Transistor (SiGe HBT) designed for operation from
50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The
device provides excellent linearity at a low cost. It can be operated over a
wide range of currents depending on the power and linearity require-
ments.
0.05GHz to 4GHz Operation
15.0dB G at 2.44GHz
MAX
P
=+23.8dBm at 2.44GHz
1dB
OIP =+37.5dBm at 2.44GHz
3
3.1dB NF at 2.44GHz
Low Cost, High Performance,
Versatility
Optimum Technology
Matching® Applied
Typical GMAX, OIP3, P1dB
VCE = 3.0V, ICE = 170mA
GaAs HBT
41
24.0
Applications
GaAs MESFET
38
22.0
InGaP HBT
Analog and Digital Wireless
Systems
OIP3
35
20.0
SiGe BiCMOS
Si BiCMOS
32
18.0
3G, Cellular, PCS, RFID
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GMAX
9
29
26
23
20
16.0
14.0
12.0
10.0
Fixed Wireless, Pager Sys-
tems
PA Stage for Medium Power
Applications
P1dB
GaN HEMT
InP HBT
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
Frequency (GHz)
RF MEMS
LDMOS
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Maximum Available Gain, Z =Z *,
23.2
dB
880MHz
S
S
Z =Z *
L
L
16.4
15.0
23.7
dB
dB
dBm
1960MHz
2440MHz
880MHz and 1960MHz
[2]
Output Power at 1dB Compression
Z =Z , Z =Z
,
S
SOPT
L
LOPT
23.8
37.4
dBm
dBm
2440MHz
880MHz
Output Third Order Intercept Point,
Z =Z , Z =Z
S
SOPT
L
LOPT
37.5
18.0
dBm
dB
1960MHz and 2440MHz
[1]
Power Gain, Z =Z
, Z =Z
S
SOPT
L
LOPT
880MHZ
[2]
13.0
11.0
3.2
dB
dB
dB
1960MHz
[2]
2440MHz
880MHz
[2]
Noise Figure , Z =Z
, Z =Z
L LOPT
S
SOPT
3.1
3.1
180
48
dB
dB
1960MHz
2440MHz
DC Current Gain
Thermal Resistance
Breakdown Voltage
Device Operating Voltage
Device Operating Current
100
5.7
300
°C/W
V
V
Junction - lead
6.0
Collector - Emitter
Collector - Emitter
Collector - Emitter
3.8
220
mA
Test Conditions:V =3V, I =170mA Typ. (unless otherwise noted), T =25°C OIP Tone Spacing=1MHz, P per tone=10dBm
CE
CE
L
3
OUT
[1] 100% production tested with Application Circuit [2] Data with Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-105051 Rev F
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