Datasheet > SGA-9089Z

SGA-9089Z

更新时间： 2024-11-26 06:11:23

品牌	Logo	应用领域
威讯 - RFMD		晶体晶体管
页数	文件大小	规格书
6页	413K
描述
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

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SGA-9089Z 数据手册

SGA-9089Z

High IP₃

MediumPower

Discrete SiGe

Transistor

SGA-9089Z

HIGH IP , MEDIUM POWER DISCRETE SiGe

TRANSISTOR

Package: SOT-89

Product Description

Features

RFMD’s SGA-9089Z is a high performance Silicon Germanium Hetero-

structure Bipolar Transistor (SiGe HBT) designed for operation from

50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The

device provides excellent linearity at a low cost. It can be operated over a

wide range of currents depending on the power and linearity require-

ments.

0.05GHz to 4GHz Operation

15.0dB G at 2.44GHz

MAX

=+23.8dBm at 2.44GHz

1dB

OIP =+37.5dBm at 2.44GHz

3.1dB NF at 2.44GHz

Low Cost, High Performance,

Versatility

Optimum Technology

Matching® Applied

Typical G_MAX, OIP₃, P_1dB

V_CE= 3.0V, I_CE= 170mA

GaAs HBT

24.0

Applications

GaAs MESFET

22.0

InGaP HBT

Analog and Digital Wireless

Systems

OIP₃

20.0

SiGe BiCMOS

Si BiCMOS

18.0

3G, Cellular, PCS, RFID

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

G_MAX

16.0

14.0

12.0

10.0

Fixed Wireless, Pager Sys-

tems

PA Stage for Medium Power

Applications

P_1dB

GaN HEMT

InP HBT

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

Frequency (GHz)

RF MEMS

LDMOS

Specification

Typ.

Parameter

Unit

Condition

Min.

Max.

Maximum Available Gain, Z =Z *,

23.2

880MHz

Z =Z *

16.4

15.0

23.7

dBm

1960MHz

2440MHz

880MHz and 1960MHz

[2]

Output Power at 1dB Compression

Z =Z , Z =Z

SOPT

LOPT

23.8

37.4

dBm

2440MHz

880MHz

Output Third Order Intercept Point,

Z =Z , Z =Z

SOPT

LOPT

37.5

18.0

dBm

1960MHz and 2440MHz

[1]

Power Gain, Z =Z

, Z =Z

SOPT

LOPT

880MHZ

[2]

13.0

11.0

3.2

1960MHz

[2]

2440MHz

880MHz

[2]

Noise Figure , Z =Z

, Z =Z

L LOPT

SOPT

3.1

180

1960MHz

2440MHz

DC Current Gain

Thermal Resistance

Breakdown Voltage

Device Operating Voltage

Device Operating Current

100

5.7

300

°C/W

Junction - lead

6.0

Collector - Emitter

3.8

220

Test Conditions:V =3V, I =170mA Typ. (unless otherwise noted), T =25°C OIP Tone Spacing=1MHz, P per tone=10dBm

OUT

[1] 100% production tested with Application Circuit [2] Data with Application Circuit

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

EDS-105051 Rev F

1 of 6

12 3 4 5 6

中文翻译

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与SGA-9089Z相关器件

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SGA-9189	STANFORD	获取价格	Reliability Qualification Report
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SGA9189Z	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA-9189Z	SIRENZA	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB1	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB2	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB3	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB4	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189ZSQ	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189ZSR	RFMD	获取价格	Medium Power Discrete SiGe Transistor

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