Datasheet > SGA-9089Z

SGA-9089Z

更新时间： 2024-11-26 04:04:55

品牌	Logo	应用领域
SIRENZA		晶体半导体晶体管
页数	文件大小	规格书
4页	154K
描述
High IP3 Medium Power Discrete SiGe Transistor

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SGA-9089Z 数据手册

Preliminary

SGA-9089Z

High IP3, Medium Power Discrete

SiGe Transistor

Product Description

Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium

Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from

DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device

provides excellent linearity at a low cost. It can be operated over a wide

range of currents depending on the power and linearity requirements.

RoHS Compliant

& Green Package

The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post

annealing process to mitigate tin whisker formation and is RoHS compliant per

EU Directive 2002/95. The package body is manufactured with green molding

compounds that contain no antimony trioxide or halogenated fire retardants.

Product Features

Typical Gmax, OIP3, P1dB V_CE=3.0V, I_CE=170mA

•

DC-4 GHz Operation

Lead Free, RoHS Compliant & Green Package

15.0 dB Gmax @ 2.44 GHz

OIP3

•

P_1dB= +23.8 dBm @ 2.44 GHz

•

OIP₃= +37.5 dBm @ 2.44 GHz

3.1 dB NF @ 2.44 GHz

Low Cost, High Performance, Versatility

Gmax

Applications

•

Analog and Digital Wireless Systems

3G, Cellular, PCS, RFID

Fixed Wireless, Pager Systems

PA stage for Medium Power Applications

P1dB

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

Frequency (GHz)

Symbol

Parameters

Units

Frequency

Min.

Typ.

Max.

880 MHz

1960 MHz

2440 MHz

23.2

16.4

15.0

Maximum Available Gain

Z_S=Z_S*, Z_L=Z_L*

G_MAX

880 MHz ^[1]

1960 MHz ^[2]

2440 MHz ^[2]

880 MHz

18.0

13.0

11.0

Power Gain

Z_S=Z_SOPT, Z_L=Z_LOPT

dBm

23.7

23.8

Output Power at 1dB Compression ^[2]

Z_S=Z_SOPT, Z_L=Z_LOPT

P_1dB

OIP₃

1960 MHz

2440 MHz

880 MHz

1960 MHz

2440 MHz

37.4

37.5

Output Third Order Intercept Point ^[2]

Z_S=Z_SOPT, Z_L=Z_LOPT

880 MHz

1960 MHz

2440 MHz

3.2

3.1

Noise Figure ^[2]

Z_S=Z_SOPT, Z_L=Z_LOPT

h_FE

BV_CEO

Rth, j-l

V_CE

DC Current Gain

100

5.7

180

300

Collector - Emitter Breakdown Voltage

Thermal Resistance (Junction - lead)

°C/W

Device Operating Voltage (collector- emitter)

Device Operating Current (collector - emitter)

3.8

I_CE

220

Test Conditions: V_CE= 3.0V, I_CE= 170mA Typ. (unless noted otherwise), T_L= 25°C

OIP₃Tone Spacing = 1MHz, Pout per tone = 10 dBm

[1] 100% production tested with Application Circuit [2] Data with Application Circuit

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

303 S. Technology Ct.

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-105051 Rev B

12 3 4

中文翻译

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与SGA-9089Z相关器件

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SGA-9189	STANFORD	获取价格	Reliability Qualification Report
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SGA9189Z	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA-9189Z	SIRENZA	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB1	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB2	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB3	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189Z-EVB4	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189ZSQ	RFMD	获取价格	Medium Power Discrete SiGe Transistor
SGA9189ZSR	RFMD	获取价格	Medium Power Discrete SiGe Transistor

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