SGA9189Z
MediumPower
Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
Features
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
50MHz to 3000MHz Operation
39dBm Output IP3 Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P1dB Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Cost-Effective
Optimum Technology
Matching® Applied
3V to 5V Operation
Typical Gmax, OIP3, P1dB @ 5V,180mA
GaAs HBT
Applications
Wireless Infrastructure Driver
Amplifiers
25
23
21
19
17
15
13
11
9
44
42
40
38
36
34
32
30
28
26
24
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
OIP3
Gmax
CATV Amplifiers
Wireless Data, WLL Amplifiers
GaAs pHEMT
Si CMOS
AN-021 Contains Detailed Appli-
cation Circuits
P1dB
7
5
Si BJT
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
GaN HEMT
RF MEMS
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Maximum Available Gain
20.5
dB
900MHz, Z = Z *, Z = Z *
S
S
L
L
13.2
19.0
dB
dB
1960MHz
900MHz [1], Z = Z
Power Gain
17.5
11.2
20.5
13.2
, Z = Z
SOPT L LOPT
S
12.2
40
dB
dBm
1960MHz [2]
900MHz, Z = Z
Output Power at 1dB Compression
Output Third Order Intercept Point
, Z = Z
L LOPT
S
SOPT
SOPT
23.5
36.5
25.5
40.0
dBm
dBm
1960MHz [2]
900MHz, Z = Z
per tone
1960MHz [2]
, Z = Z
P
= +10dBm
S
L
LOPT, OUT
39.0
2.1
dBm
dB
Noise Figure
900MHz, Z = Z
, Z = Z
SOPT L LOPT
S
2.6
180
8.5
47
5.5
180
dB
1960MHz
DC Current Gain
100
7.5
300
195
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
Operating Current
V
°C/W
V
collector - emitter
junction - lead
collector - emitter
155
mA
Test Conditions: V = 5V, I = 180mA (unless otherwise noted), T = 25°C.
CE
CQ
L
[1] 100% Tested [2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018
1 of 5
5秒后页面跳转
AO3401场效应管参数、引脚图、应用原理图
BT131可控硅参数及引脚图、工作原理详解
74LS32芯片参数、引脚图及功能真值表
全球首块英伟达H200交付 黄仁勋“送货上门”
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
