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SGA9189Z-EVB1

更新时间： 2024-11-27 00:59:11
品牌 Logo 应用领域
威讯 - RFMD /
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5页 351K
描述
Medium Power Discrete SiGe Transistor

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SGA9189Z-EVB1 数据手册

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SGA9189Z  
MediumPower  
Discrete SiGe  
Transistor  
SGA9189Z  
Medium Power Discrete SiGe Transistor  
Package: SOT-89  
Product Description  
Features  
RFMD’s SGA9189Z is a high performance transistor designed for operation to  
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This  
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe  
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-  
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.  
The matte tin finish on the lead-free package utilizes a post annealing process to  
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.  
This package is also manufactured with green molding compounds that contain no  
antimony trioxide nor halogenated fire retardants.  
50MHz to 3000MHz Operation  
39dBm Output IP3 Typ. at  
1.96GHz  
12.2dB Gain Typ. at 1.96GHz  
25.5dBm P1dB Typ. at 1.96GHz  
2.1dB NF Typ. at 0.9GHz  
Cost-Effective  
Optimum Technology  
Matching® Applied  
3V to 5V Operation  
Typical Gmax, OIP3, P1dB @ 5V,180mA  
GaAs HBT  
Applications  
Wireless Infrastructure Driver  
Amplifiers  
25  
23  
21  
19  
17  
15  
13  
11  
9
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
OIP3  
Gmax  
CATV Amplifiers  
Wireless Data, WLL Amplifiers  
GaAs pHEMT  
Si CMOS  
AN-021 Contains Detailed Appli-  
cation Circuits  
P1dB  
7
5
Si BJT  
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5  
Frequency (GHz)  
GaN HEMT  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
Maximum Available Gain  
20.5  
dB  
900MHz, Z = Z *, Z = Z *  
S
S
L
L
13.2  
19.0  
dB  
dB  
1960MHz  
900MHz [1], Z = Z  
Power Gain  
17.5  
11.2  
20.5  
13.2  
, Z = Z  
SOPT L LOPT  
S
12.2  
40  
dB  
dBm  
1960MHz [2]  
900MHz, Z = Z  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
, Z = Z  
L LOPT  
S
SOPT  
SOPT  
23.5  
36.5  
25.5  
40.0  
dBm  
dBm  
1960MHz [2]  
900MHz, Z = Z  
per tone  
1960MHz [2]  
, Z = Z  
P
= +10dBm  
S
L
LOPT, OUT  
39.0  
2.1  
dBm  
dB  
Noise Figure  
900MHz, Z = Z  
, Z = Z  
SOPT L LOPT  
S
2.6  
180  
8.5  
47  
5.5  
180  
dB  
1960MHz  
DC Current Gain  
100  
7.5  
300  
195  
Breakdown Voltage  
Thermal Resistance  
Device Operating Voltage  
Operating Current  
V
°C/W  
V
collector - emitter  
junction - lead  
collector - emitter  
155  
mA  
Test Conditions: V = 5V, I = 180mA (unless otherwise noted), T = 25°C.  
CE  
CQ  
L
[1] 100% Tested [2] Sample Tested  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121018  
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