Preliminary
SGA-9289
SGA-9289Z
RoHS Compliant
& Green Package
Pb
Product Description
Sirenza Microdevices’ SGA-9289 is a high performance transistor
designed for operation to 3 GHz. With optimal matching at 2 GHz,
OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on
a Silicon Germanium Heterostructure Bipolar Transistor (SiGe
HBT) process. The SGA-9289 is cost-effective for applications
requiring high linearity even at moderate biasing levels. It is well
suited for operation at both 5V and 3V.
Medium Power Discrete SiGe Transistor
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Product Features
•
•
•
•
•
•
•
•
Available in RoHS compliant Green packaging
50-3000 MHz Operation
42.5 dBm Ouput IP3 Typical at 1.96 GHz
12.0 dB Gain Typical at 1.96 GHz
27.5 dBm P1dB Typical at 1.96 GHz
2.4 dB NF Typical at 0.9 GHz
Cost Effective
Typical Gmax, OIP3, P1dB @ 5V,270mA
25
23
21
19
17
15
13
11
9
44
42
40
38
36
34
32
30
28
26
24
OIP3
3-5 V Operation
Gmax
Applications
•
•
Wireless Infrastructure Driver Amplifiers
CATVAmplifiers
P1dB
•
•
Wireless Data, WLL Amplifiers
AN-022 contains detailed application circuits
7
5
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
Frequency (GHz)
Test Frequency
[1] 100% Tested
[2] Sample Tested
Device Characteristics, T = 25ºC
CE = 5V, ICQ =280mA (unless otherwise noted)
Symbol
Units
Min.
Typ.
Max.
V
Maximum Available Gain
ZS=ZS*, ZL=ZL*
f = 900 MHz
f = 1960 MHz
20.5
13.1
GMAX
dB
dB
Power Gain
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz [1]
f = 1960 MHz [2]
16.2
11.0
17.7
12.0
19.2
13.0
G
Output 1dB Compression Point
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz
f = 1960 MHz [2]
28.0
27.5
P1dB
OIP3
NF
dBm
dBm
26.0
40.0
Output Third Order Intercept Point
ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone
f = 900 MHz
f = 1960 MHz [2]
42.0
42.5
Noise Figure
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz
f = 1960 MHz
2.4
2.5
dB
V
BVCEO
hFE
Collector - Emitter Breakdown Voltage
DC current gain
7.5
8.5
180
32
100
300
Rth
VCE
I
Thermal Resistance (junction-to-lead)
Operating Voltage (collector-to-emitter)
Operating Current
ºC/W
V
5.5
mA
250
280
320
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility
for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101498 Rev G
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