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SGA-9289Z

更新时间： 2024-11-26 04:04:55
品牌 Logo 应用领域
SIRENZA 晶体半导体晶体管射频微波
页数 文件大小 规格书
4页 100K
描述
Medium Power Discrete SiGe Transistor

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SGA-9289Z 数据手册

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SGA-9289  
SGA-9289Z  
RoHS Compliant  
& Green Package  
Pb  
Product Description  
Sirenza Microdevices’ SGA-9289 is a high performance transistor  
designed for operation to 3 GHz. With optimal matching at 2 GHz,  
OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on  
a Silicon Germanium Heterostructure Bipolar Transistor (SiGe  
HBT) process. The SGA-9289 is cost-effective for applications  
requiring high linearity even at moderate biasing levels. It is well  
suited for operation at both 5V and 3V.  
Medium Power Discrete SiGe Transistor  
The matte tin finish on Sirenza’s lead-free package utilizes a post  
annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. This package is also  
manufactured with green molding compounds that contain no  
antimony trioxide nor halogenated fire retardants.  
Product Features  
•
•
•
•
•
•
•
•
Available in RoHS compliant Green packaging  
50-3000 MHz Operation  
42.5 dBm Ouput IP3 Typical at 1.96 GHz  
12.0 dB Gain Typical at 1.96 GHz  
27.5 dBm P1dB Typical at 1.96 GHz  
2.4 dB NF Typical at 0.9 GHz  
Cost Effective  
Typical Gmax, OIP3, P1dB @ 5V,270mA  
25  
23  
21  
19  
17  
15  
13  
11  
9
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
OIP3  
3-5 V Operation  
Gmax  
Applications  
•
•
Wireless Infrastructure Driver Amplifiers  
CATVAmplifiers  
P1dB  
•
•
Wireless Data, WLL Amplifiers  
AN-022 contains detailed application circuits  
7
5
0.9  
1.1  
1.3  
1.5  
1.7  
1.9  
2.1  
2.3  
2.5  
Frequency (GHz)  
Test Frequency  
[1] 100% Tested  
[2] Sample Tested  
Device Characteristics, T = 25ºC  
CE = 5V, ICQ =280mA (unless otherwise noted)  
Symbol  
Units  
Min.  
Typ.  
Max.  
V
Maximum Available Gain  
ZS=ZS*, ZL=ZL*  
f = 900 MHz  
f = 1960 MHz  
20.5  
13.1  
GMAX  
dB  
dB  
Power Gain  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz [1]  
f = 1960 MHz [2]  
16.2  
11.0  
17.7  
12.0  
19.2  
13.0  
G
Output 1dB Compression Point  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz  
f = 1960 MHz [2]  
28.0  
27.5  
P1dB  
OIP3  
NF  
dBm  
dBm  
26.0  
40.0  
Output Third Order Intercept Point  
ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone  
f = 900 MHz  
f = 1960 MHz [2]  
42.0  
42.5  
Noise Figure  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz  
f = 1960 MHz  
2.4  
2.5  
dB  
V
BVCEO  
hFE  
Collector - Emitter Breakdown Voltage  
DC current gain  
7.5  
8.5  
180  
32  
100  
300  
Rth  
VCE  
I
Thermal Resistance (junction-to-lead)  
Operating Voltage (collector-to-emitter)  
Operating Current  
ºC/W  
V
5.5  
mA  
250  
280  
320  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility  
for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the  
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.  
Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101498 Rev G  
1234

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