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SGA-9189Z

更新时间： 2024-02-21 07:36:30
品牌 Logo 应用领域
SIRENZA 晶体半导体晶体管射频微波
页数 文件大小 规格书
4页 99K
描述
Medium Power Discrete SiGe Transistor

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SGA-9189Z 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：5A991.G
HTS代码：8542.33.00.01风险等级：5.12
Is Samacsys：N特性阻抗：50 Ω
构造：COMPONENT增益：11.2 dB
JESD-609代码：e3最大工作频率：3000 MHz
最小工作频率：50 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND MEDIUM POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

SGA-9189Z 数据手册

 浏览型号SGA-9189Z的Datasheet PDF文件第2页浏览型号SGA-9189Z的Datasheet PDF文件第3页浏览型号SGA-9189Z的Datasheet PDF文件第4页 
SGA-9189  
SGA-9189Z  
RoHS Compliant  
& Green Package  
Pb  
Product Description  
Sirenza Microdevices’ SGA-9189 is a high performance transistor designed  
for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and  
P1dB=25.5 dBm. This RF device is based on a Silicon Germanium  
Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is  
cost-effective for applications requiring high linearity even at moderate  
biasing levels. It is well suited for operation at both 5V and 3V.  
Medium Power Discrete SiGe Transistor  
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing  
process to mitigate tin whisker formation and is RoHS compliant per EU Directive  
2002/95. This package is also manufactured with green molding compounds  
that contain no antimony trioxide nor halogenated fire retardants.  
Product Features  
•
•
•
•
•
•
•
•
Available in RoHS compliant Green packaging  
50-3000 MHz Operation  
Typical Gmax, OIP3, P1dB @ 5V,180mA  
39 dBm Ouput IP3 Typical at 1.96 GHz  
12.2 dB Gain Typical at 1.96 GHz  
25.5 dBm P1dB Typical at 1.96 GHz  
2.1 dB NF Typical at 0.9 GHz  
Cost Effective  
25  
23  
21  
19  
17  
15  
13  
11  
9
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
OIP3  
3-5 V Operation  
Gmax  
Applications  
•
•
Wireless Infrastructure Driver Amplifiers  
CATVAmplifiers  
P1dB  
7
5
•
•
Wireless Data, WLL Amplifiers  
AN-021 contains detailed application circuits  
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5  
Frequency (GHz)  
Test Frequency  
[1] 100% Tested  
[2] Sample Tested  
Device Characteristics, T = 25ºC  
VCE = 5V, ICQ =180mA (unless otherwise noted)  
Symbol  
Units  
Min.  
Typ.  
Max.  
Maximum Available Gain  
ZS=ZS*, ZL=ZL*  
f = 900 MHz  
f = 1960 MHz  
20.5  
13.2  
GMAX  
G
dB  
dB  
Power Gain  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz [1]  
f = 1960 MHz [2]  
17.5  
11.2  
19.0  
12.2  
20.5  
13.2  
Output 1dB Compression Point  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz  
f = 1960 MHz [2]  
25.8  
25.5  
P1dB  
OIP3  
NF  
dBm  
dBm  
23.5  
36.5  
Output Third Order Intercept Point  
ZS=ZSOPT, ZL=ZLOPT, POUT= +10 dBm per tone  
f = 900 MHz  
f = 1960 MHz [2]  
40.0  
39.0  
Noise Figure  
ZS=ZSOPT, ZL=ZLOPT  
f = 900 MHz  
f = 1960 MHz  
2.1  
2.6  
dB  
V
BVCEO  
hFE  
Collector - Emitter Breakdown Voltage  
DC current gain  
7.5  
8.5  
180  
47  
100  
300  
Rth  
VCE  
I
Thermal Resistance (junction-to-lead)  
Operating Voltage (collector-to-emitter)  
Operating Current  
ºC/W  
V
5.5  
mA  
155  
180  
195  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101497 Rev H  
1234

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