SGA-8343
SGA-8343Z
Low Noise, High Gain SiGe HBT
RoHS Compliant
& Green Package
Pb
Product Description
Preliminary
Sirenza Microdevices’ SGA-8343 is a high performance Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
designed for operation from DC to 6 GHz. The SGA-8343 is
optimized for 3V operation but can be biased at 2V for low-voltage
battery operated systems. The device provides high gain, low NF,
and excellent linearity at a low cost. It can be operated at very low
bias currents in applications where high linearity is not required.
Product Features
• Now Available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-6 GHz Operation
• 0.9 dB NFMIN @ 0.9 GHz
• 24 dB Gmax @ 0.9 GHz
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
• |GOPT|=0.10 @ 0.9 GHz
• OIP3 = +28 dBm, P1dB = +9 dBm
• Low Cost, High Performance, Versatility
Typical Performance - 3V, 10mA
4 0
3 5
3 0
2 5
2 0
1 5
1 0
5
2 .4
2 .1
1 .8
1 .5
1 .2
0 .9
0 .6
0 .3
0
Applications
NFMIN
Gain
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS, RFID
• Fixed Wireless, Pager Systems
• Driver Stage for Low Power Applica-
tions
Gmax
0
• Oscillators
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Test Conditions
VCE=3V, ICQ=10mA, 25°C
(unless otherwise noted)
Symbol
Device Characteristics
Test Frequency
Units
Min.
Typ.
Max.
0.9 GHz
1.9 GHz
2.4 GHz
23.9
19.3
17.7
GMAX
Maximum Available Gain
ZS=ZS*, ZL=ZL*
dB
0.9 GHz
1.9 GHz
2.4 GHz
0.94
1.10
1.18
NF
Minimum Noise Figure
ZS=GammaOPT, ZL=ZL*
ZS=ZL= 50 Ohms
dB
[1]
S21
NF
Insertion Gain
0.9 GHz
1.9 GHz
dB
dB
21.0
22.0
1.40
23.0
1.75
LNA Application
Circuit Board
Noise Figure[2]
LNA Application
Circuit Board
[2]
Gain
OIP3
P1dB
Gain
1.9 GHz
1.9 GHz
1.9 GHz
dB
15.5
25.8
7.5
16.5
27.8
9.0
17.5
LNA Application
Circuit Board
Output Third Order Intercept Point[2]
dBm
dBm
LNA Application
Circuit Board
Output 1dB Compression Point[2]
DC Current Gain
hFE
BVCEO
Rth
120
5.7
180
6.0
300
Collector-Emitter Breakdown Voltage
Thermal Resistance
V
oC/W
V
junction-to-lead
collector-emitter
collector-emitter
200
VCE
Operating Voltage
4.0
50
ICE
Operating Current
mA
[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.
[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is
an engineering application circuit board (parts are pressed down on the circuit board). The application circuit represents a trade-off between the optimal noise match and
input return loss.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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