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SGA-8543Z PDF预览

SGA-8543Z

更新时间: 2024-09-17 04:04:55
品牌 Logo 应用领域
SIRENZA 晶体半导体晶体管开关光电二极管
页数 文件大小 规格书
4页 102K
描述
High IP3 Medium Power Discrete SiGe Transistor

SGA-8543Z 数据手册

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Preliminary  
RoHS Compliant  
& Green Package  
SGA-8543Z  
Pb  
High IP3, Medium Power Discrete  
SiGe Transistor  
Product Description  
Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium  
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from  
DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be  
biased at 2.7V for low-voltage battery operated systems. The device provides  
low NF and excellent linearity at a low cost. It can be operated over a wide  
range of currents depending on the power and linearity requirements.  
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post  
annealing process to mitigate tin whisker formation and is RoHS compliant per  
EU Directive 2002/95. The package body is manufactured with green molding  
compounds that contain no antimony trioxide or halogenated fire retardants.  
Product Features  
Typical Gmax, OIP3, P1dB @3.3V, 86mA  
DC-3.5 GHz Operation  
31  
28  
25  
22  
19  
16  
13  
10  
38  
35  
32  
29  
26  
23  
20  
17  
Lead Free, RoHS Compliant & Green Package  
1.5 dB NFMIN @ 2.44 GHz  
15.6 dB Gmax @ 2.44 GHz  
OIP3  
P1dB = +20.6 dBm @ 2.44 GHz  
OIP3 = +34.6 dBm @ 2.44 GHz  
Low Cost, High Performance, Versatility  
Gmax  
Applications  
Analog and Digital Wireless Systems  
3G, Cellular, PCS, RFID  
Fixed Wireless, Pager Systems  
PA stage for Medium Power Applications  
AN-079 contains detailed application circuits  
P1dB  
1.9  
0.9  
1.1  
1.3  
1.5  
1.7  
2.1  
2.3  
2.5  
Frequency (GHz)  
Symbol  
GMAX  
S21  
Parameters  
Units  
Frequency  
Min.  
Typ.  
Max.  
Maximun Available Gain  
ZS=ZS*, ZL=ZL*  
880 MHz  
2440 MHz  
880 MHz  
22.9  
15  
dB  
dB  
dB  
Insertion Gain [1]  
18  
Power Gain [2]  
880 MHz  
19  
14  
G
ZS=ZSOPT, ZL=ZLOPT  
2440 MHz  
Output Power at 1dB Compression [2]  
ZS=ZSOPT, ZL=ZLOPT  
Output Third Order Intercept Point [2]  
ZS=ZSOPT, ZL=ZLOPT  
Noise Figure [2]  
ZS=ZSOPT, ZL=ZLOPT  
880 MHz  
20  
P1dB  
OIP3  
NF  
dBm  
dBm  
dB  
2440 MHz  
20.6  
880 MHz  
33.4  
34.6  
2440 MHz  
880 MHz  
3.1  
2.4  
1.0  
1.5  
2440 MHz  
Minimum Noise Figure with ICE = 25mA  
880 MHz  
NFmin  
dB  
ZS= ΓOPT, ZL=ZL*  
2440 MHz  
hFE  
BVCEO  
Rth, j-l  
VCE  
DC Current Gain  
120  
5.7  
180  
6
300  
Collector - Emitter Breakdown Voltage  
Thermal Resistance (Junction - lead)  
V
°C/W  
V
151  
Device Operating Voltage (collector- emitter)  
Device Operating Current (collector - emitter)  
3.8  
95  
ICE  
mA  
Test Conditions:  
V
CE = 3.3V, ICE = 86mA Typ. (unless noted otherwise), TL = 25°C  
OIP3 Tone Spacing = 1MHz, Pout per tone = 5 dBm  
[2] Data with Application Circuit  
[1] 100% production tested using 50 ohm contact board (no matching circuitry)  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-102583 Rev B  

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