Preliminary
RoHS Compliant
& Green Package
SGA-8543Z
Pb
High IP3, Medium Power Discrete
SiGe Transistor
Product Description
Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from
DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be
biased at 2.7V for low-voltage battery operated systems. The device provides
low NF and excellent linearity at a low cost. It can be operated over a wide
range of currents depending on the power and linearity requirements.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Product Features
Typical Gmax, OIP3, P1dB @3.3V, 86mA
•
•
•
•
DC-3.5 GHz Operation
31
28
25
22
19
16
13
10
38
35
32
29
26
23
20
17
Lead Free, RoHS Compliant & Green Package
1.5 dB NFMIN @ 2.44 GHz
15.6 dB Gmax @ 2.44 GHz
OIP3
•
P1dB = +20.6 dBm @ 2.44 GHz
•
•
OIP3 = +34.6 dBm @ 2.44 GHz
Low Cost, High Performance, Versatility
Gmax
Applications
•
•
•
•
•
Analog and Digital Wireless Systems
3G, Cellular, PCS, RFID
Fixed Wireless, Pager Systems
PA stage for Medium Power Applications
AN-079 contains detailed application circuits
P1dB
1.9
0.9
1.1
1.3
1.5
1.7
2.1
2.3
2.5
Frequency (GHz)
Symbol
GMAX
S21
Parameters
Units
Frequency
Min.
Typ.
Max.
Maximun Available Gain
ZS=ZS*, ZL=ZL*
880 MHz
2440 MHz
880 MHz
22.9
15
dB
dB
dB
Insertion Gain [1]
18
Power Gain [2]
880 MHz
19
14
G
ZS=ZSOPT, ZL=ZLOPT
2440 MHz
Output Power at 1dB Compression [2]
ZS=ZSOPT, ZL=ZLOPT
Output Third Order Intercept Point [2]
ZS=ZSOPT, ZL=ZLOPT
Noise Figure [2]
ZS=ZSOPT, ZL=ZLOPT
880 MHz
20
P1dB
OIP3
NF
dBm
dBm
dB
2440 MHz
20.6
880 MHz
33.4
34.6
2440 MHz
880 MHz
3.1
2.4
1.0
1.5
2440 MHz
Minimum Noise Figure with ICE = 25mA
880 MHz
NFmin
dB
ZS= ΓOPT, ZL=ZL*
2440 MHz
hFE
BVCEO
Rth, j-l
VCE
DC Current Gain
120
5.7
180
6
300
Collector - Emitter Breakdown Voltage
Thermal Resistance (Junction - lead)
V
°C/W
V
151
Device Operating Voltage (collector- emitter)
Device Operating Current (collector - emitter)
3.8
95
ICE
mA
Test Conditions:
V
CE = 3.3V, ICE = 86mA Typ. (unless noted otherwise), TL = 25°C
OIP3 Tone Spacing = 1MHz, Pout per tone = 5 dBm
[2] Data with Application Circuit
[1] 100% production tested using 50 ohm contact board (no matching circuitry)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102583 Rev B