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SGA8543Z-EVB2

更新时间： 2024-11-27 01:04:35
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威讯 - RFMD /
页数 文件大小 规格书
5页 188K
描述
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

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SGA8543Z-EVB2 数据手册

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SGA8543Z  
High IP3  
,
MediumPower  
Discrete SiGe  
Transistor  
SGA8543Z  
HIGH IP , MEDIUM POWER DISCRETE SiGe  
3
TRANSISTOR  
Product Description  
Features  
RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipo-  
lar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The  
SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-volt-  
age battery operated systems. The device provides low NF and excellent linearity at  
a low cost. It can be operated over a wide range of currents depending on the  
power and linearity requirements.The matte tin finish on the lead-free “Z” package  
is applied using a post annealing process to mitigate tin whisker formation and is  
RoHS compliant per EU Directive 2002/95. The package body is manufactured  
with green molding compounds that contain no antimony triox-  
.05GHzto3.5GHz Operation  
Lead Free, RoHS Compliant, and  
Green Package  
1.5dB NFMN at 2.44GHz  
15.6dB GMAX at 2.44GHz  
P1dB =+20.6dBm at 2.44GHz  
OIP3 =+34.6dBm at 2.44GHz  
Optimum Technology  
ide or halogenated fire retardants.  
Matching® Applied  
Low Cost, High Performance,  
Typical GMAX, OIP3, P1dB  
GaAs HBT  
Versatility  
@ 3.3V, 86mA  
31.0  
28.0  
25.0  
22.0  
19.0  
16.0  
13.0  
10.0  
38  
35  
32  
29  
26  
23  
20  
17  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
Applications  
Analog and Digital Wireless  
Systems  
OIP3  
GMAX  
3G, Cellular, PCS, RFID  
P1dB  
GaAs pHEMT  
Si CMOS  
Fixed Wireless, Pager Systems  
PA Stage for Medium Power  
Applications  
Si BJT  
GaN HEMT  
RF MEMS  
0.9  
1.1  
1.3  
1.5  
1.7  
1.9  
2.1  
2.3  
2.5  
AN-079 Contains Detailed  
Application Circuits  
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
Power Gain  
19.0  
dB  
880MHz, Z =Z  
, Z =Z  
L
S
SOPT  
SOPT  
SOPT  
SOPT  
LOPT  
LOPT  
LOPT  
LOPT  
14.0  
20.0  
dB  
dBm  
2440MHz  
[2]  
880MHz, Z =Z  
, Z =Z  
L
Output Power at 1dB Compression  
S
20.6  
33.4  
dBm  
dBm  
2440MHz  
[2]  
880MHz, Z =Z  
, Z =Z  
L
Output Third Order Intercept Point  
Noise Figure  
S
34.6  
3.1  
dBm  
dB  
2440MHz  
880MHz, Z =Z  
, Z =Z  
L
S
2.4  
1.0  
dB  
dB  
2440MHz  
Minimum Noise Figure  
Maximum Available Gain  
880MHz, I =25mA, Z =Γ , Z =Z , NF  
CE S OPT L L MIN  
2440MHz  
880MHz, Z =Z , Z =Z  
L
1.5  
22.9  
dB  
dB  
S
S
L
15.0  
18.0  
dB  
dB  
2440MHz  
880MHz  
[1]  
Insertion Gain  
D
Current Gain  
120  
5.7  
180  
6.0  
300  
CC  
Breakdown Voltage  
V
V
Collector - Emitter  
Collector - Emitter  
Collector - Emitter  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
3.8  
95  
mA  
°C/W  
151  
junction to backside  
per tone=5dBm  
Test Conditions: V =3.3V, I =86mA Typ. (unless noted otherwise), T =25°C, OIP Tone Spacing=1MHz, P  
CE  
CE  
L
3
OUT  
[1] 100% production tested using 50Ω contact board (no matching circuitry) [2] Data with Application Circuit  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS100809  
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