Datasheet > SGA7489ZPCK1

SGA7489ZPCK1

更新时间： 2024-11-08 01:08:35

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	486K
描述
DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

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SGA7489ZPCK1 数据手册

SGA7489ZDC

to 3000MHz

Silicon Germa-

nium HBT Cas-

cadable Gain

Block

SGA7489Z

DC to 3000MHz SILICON GERMANIUM HBT

CASCADABLE GAIN BLOCK

Package: SOT-89

Product Description

Features

The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high F_Tand

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.



DC to 3000MHz Operation



Very High IF Output IP :

39dBm at 100MHz



High Output IP : +35.5dBm

typ. at 850MHz

Low Noise Figure: 3.3dB typ.

at 1950MHz

Optimum Technology

Matching® Applied

Applications

Gain, Return Loss, and Isolation vs. Frequency

GaAs HBT

V_D=5.0V, I_D=115mA (Typ), T_LEAD=+25C



Oscillator Amplifiers

GaAs MESFET

InGaP HBT



PA for Low/Medium Power

Applications

-5

Gain

SiGe BiCMOS

-10

Si BiCMOS

Input Return

Loss



IF/RF Buffer Amplifier

Drivers for CATV Amplifiers

LO Driver Amplifier

SiGe HBT



-15

GaAs pHEMT

Output

Return Loss

-20

Si CMOS

Si BJT

-25

Isolation

GaN HEMT

InP HBT

RF MEMS

LDMOS

-30

500

1000

1500

2000

2500

3000

Frequency (MHz)

Specification

Parameter

Unit

Condition

Min.

20.0

17.0

Typ.

21.5

18.5

22.4

20.0

39.0

35.5

33.0

36.0*

3000

Max.

23.0

20.0

Small Signal Gain

850MHz

1950MHz

850MHz

1950MHz

100MHz

850MHz

1950MHz

Output Power at 1dB Compression

Output Third Intercept Point

dBm

MHz

18.5

31.0

1950MHz, Using 2GHz App. Ckt.

>9dB

Bandwidth Determined by Return

Loss

Input Return Loss

Output Return Loss

Noise Figure

10.3

9.0

15.0

11.0

3.3

1950MHz

1950MHz, Z =50Ω

4.3

Reverse Isolation

Device Operating Voltage

Device Operating Current

Thermal Resistance

(Junction - Lead)

23.0

5.0

115

1950MHz

4.7

103

5.3

127

°C/W

Test Conditions: V =8V, I =115mA Typ., OIP Tone Spacing=1MHz, P

per tone=0dBm, R

=26Ω, T =25°C, Z =Z =50Ω

OUT

BIAS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100915

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与SGA7489ZPCK1相关器件

型号	品牌	获取价格	描述	数据表
SGA7489ZSQ	RFMD	获取价格	DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA7489ZSR	RFMD	获取价格	DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA-8343	SIRENZA	获取价格	Low Noise, High Gain SiGe HBT
SGA-8343X	STANFORD	获取价格	Reliability Qualification Report
SGA8343Z	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA-8343Z	SIRENZA	获取价格	Low Noise, High Gain SiGe HBT
SGA8343ZPCK1	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK2	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK3	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT
SGA8343ZPCK4	RFMD	获取价格	LOW NOISE, HIGH GAIN SiGe HBT

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