S9015T
-0.1A , -50V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
ꢀ
ꢀ
ꢀ
General Purpose Switching and Amplification.
High Total Power Dissipation.(PC=0.45W)
High hFE and Good Linearity
CLASSIFICATION OF hFE
Product-Rank
S9015T-A
S9015T-B
100~300
S9015T-C
200~600
S9015T-D
400~1000
Range
60~150
1Emitter
2Base
3Collector
Collector
3
2
Base
Millimeter
Millimeter
REF.
REF.
Min.
4.40
4.30
12.70
3.30
0.36
Max.
4.70
4.70
-
3.81
0.56
Min.
Max.
A
B
C
D
E
F
G
H
J
0.30
0.51
1.27 TYP.
1.10
2.42
0.36
1.40
2.66
0.76
1
Emitter
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
-50
V
V
Collector to Emitter Voltage
Emitter to Base Voltage
-45
-5
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
-0.1
A
PC
0.45
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
-50
-45
-5
Typ
Max
Unit
V
Test condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
-
-
-
-
-
-
-
-
-
-
-
IC= -0.1mA, IE=0
IC= -1mA, IB=0
V
-
V
IE= -0.1mA, IC=0
VCB= -50V, IE=0
-
-0.05
-0.05
1000
-0.3
-1
µA
µA
Emitter Cut-Off Current
IEBO
-
VEB= -5V, IC=0
DC Current Gain
hFE
60
-
VCE= -5V, IC= -1mA
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
V
V
-
100
-
MHz VCE= -5V, IC= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Aug-2012 Rev. A
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