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S9018D-BP PDF预览

S9018D-BP

更新时间: 2024-11-18 13:13:11
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
2页 215K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92, PLASTIC PACKAGE-3

S9018D-BP 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
Is Samacsys:N最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:18 V配置:SINGLE
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

S9018D-BP 数据手册

 浏览型号S9018D-BP的Datasheet PDF文件第2页 
M C C  
S9018-G  
S9018-H  
S9018-I  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.31Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.05A  
NPN Silicon  
Transistors  
Collector-base Voltage 25V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9018  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
25  
18  
4.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=20Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=15Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=3.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
28  
---  
---  
270  
0.5  
1.4  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =10mAdc, IB=1.0mAdc)  
C
Base-Emitter Saturation Voltage  
G
(I =10mAdc, IB=1.0mAdc)  
C
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
600  
---  
MHz  
INCHES  
MM  
(I =5.0mAdc, VCE=5.0Vdc,  
f=400MHz)  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
C
.190  
.190  
.590  
.020  
.160  
.104  
CLASSIFICATION OF H FE  
Rank  
Range  
G
70-108  
H
I
E
G
97-146  
130-198  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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