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S9018H-BP PDF预览

S9018H-BP

更新时间: 2024-02-10 00:37:11
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 227K
描述
Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

S9018H-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliant风险等级:5.13
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:18 V
配置:SINGLEJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

S9018H-BP 数据手册

 浏览型号S9018H-BP的Datasheet PDF文件第2页 
M C C  
S9018-G  
S9018-H  
S9018-I  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.31Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.05A  
NPN Silicon  
Transistors  
Collector-base Voltage 25V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9018  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
25  
18  
4.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=20Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=15Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=3.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
28  
---  
---  
270  
0.5  
1.4  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
E
E
B
(I =10mAdc, IB=1.0mAdc)  
B
C
C
C
Base-Emitter Saturation Voltage  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
(I =10mAdc, IB=1.0mAdc)  
C
G
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
600  
---  
MHz  
(I =5.0mAdc, VCE=5.0Vdc,  
f=400MHz)  
C
INCHES  
MIN  
MM  
DIM  
A
B
C
D
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
CLASSIFICATION OF H FE  
Rank  
Range  
G
70-108  
H
I
97-146  
130-198  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 2  
Revision: C  
2012/10/15  

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